Collector Engineering of ESD PNP in BCD Technologies

Yujie Zhou, David Lafonteese, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

PNP bipolar transistors are an ESD protection solution for high-voltage analog products. Using both measurements and TCAD simulations, this work analyzes the effects of the deep collector P-Well implants on the I-V characteristic of a high-voltage lateral PNP. Design guidelines for a PNP protection device are formulated; specifically, it is recommended to use a deep and narrow collector and minimize vertical non-uniformity in the doping profile.

Original languageEnglish (US)
Title of host publication2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665456722
DOIs
StatePublished - 2023
Externally publishedYes
Event61st IEEE International Reliability Physics Symposium, IRPS 2023 - Monterey, United States
Duration: Mar 26 2023Mar 30 2023

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2023-March
ISSN (Print)1541-7026

Conference

Conference61st IEEE International Reliability Physics Symposium, IRPS 2023
Country/TerritoryUnited States
CityMonterey
Period3/26/233/30/23

Keywords

  • Electrostatic discharge
  • TCAD
  • bipolar transistors
  • semiconductor device breakdown
  • semiconductor device reliability

ASJC Scopus subject areas

  • General Engineering

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