@inproceedings{224d3867dcda416bb6f8fe2f45dc236b,
title = "Collector Engineering of ESD PNP in BCD Technologies",
abstract = "PNP bipolar transistors are an ESD protection solution for high-voltage analog products. Using both measurements and TCAD simulations, this work analyzes the effects of the deep collector P-Well implants on the I-V characteristic of a high-voltage lateral PNP. Design guidelines for a PNP protection device are formulated; specifically, it is recommended to use a deep and narrow collector and minimize vertical non-uniformity in the doping profile.",
keywords = "Electrostatic discharge, TCAD, bipolar transistors, semiconductor device breakdown, semiconductor device reliability",
author = "Yujie Zhou and David Lafonteese and Elyse Rosenbaum",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 61st IEEE International Reliability Physics Symposium, IRPS 2023 ; Conference date: 26-03-2023 Through 30-03-2023",
year = "2023",
doi = "10.1109/IRPS48203.2023.10117930",
language = "English (US)",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings",
address = "United States",
}