Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser

R. Chan; M. Feng; N. Holonyak; A. James; G. Walter

doi:10.1063/1.2191448

Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser

R. Chan, M. Feng, N. Holonyak, A. James, G. Walter

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Data are presented showing significant structure in the collector I-V characteristics of a transistor laser, a decrease ("compression") in the common-emitter gain (ΒΞΔ IC Δ IB), that can be mapped in some detail and related to quantum well (QW) carrier recombination. The change in gain (Β) and laser wavelength corresponding to stimulated recombination (stimulated emission) on QW transitions, which is compared with operation in spontaneous recombination (cavity Q spoiled), is used with conventional transistor charge analysis to reveal the dynamic properties of the transistor laser.

Original language	English (US)
Article number	143508
Journal	Applied Physics Letters
Volume	88
Issue number	14
DOIs	https://doi.org/10.1063/1.2191448
State	Published - Apr 3 2006

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Physics and Astronomy (miscellaneous)

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10.1063/1.2191448

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@article{0aaee790e1e142afb55825256724f28f,

title = "Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser",

abstract = "Data are presented showing significant structure in the collector I-V characteristics of a transistor laser, a decrease ({"}compression{"}) in the common-emitter gain (ΒΞΔ IC Δ IB), that can be mapped in some detail and related to quantum well (QW) carrier recombination. The change in gain (Β) and laser wavelength corresponding to stimulated recombination (stimulated emission) on QW transitions, which is compared with operation in spontaneous recombination (cavity Q spoiled), is used with conventional transistor charge analysis to reveal the dynamic properties of the transistor laser.",

author = "R. Chan and M. Feng and N. Holonyak and A. James and G. Walter",

note = "Funding Information: The authors are grateful for the support of DARPA Contract No. HR0011-04-1-0034 [Hyper-Uniform Nano-photonics Technologies (HUNT) Center]. One of the authors (N.H., Jr.) is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and another author (M.F.) acknowledges the support of the Nick Holonyak, Jr. Chair of Electrical and Computer Engineering. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2006",

month = apr,

day = "3",

doi = "10.1063/1.2191448",

language = "English (US)",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser

AU - Chan, R.

AU - Feng, M.

AU - Holonyak, N.

AU - James, A.

AU - Walter, G.

N1 - Funding Information: The authors are grateful for the support of DARPA Contract No. HR0011-04-1-0034 [Hyper-Uniform Nano-photonics Technologies (HUNT) Center]. One of the authors (N.H., Jr.) is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and another author (M.F.) acknowledges the support of the Nick Holonyak, Jr. Chair of Electrical and Computer Engineering. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2006/4/3

Y1 - 2006/4/3

N2 - Data are presented showing significant structure in the collector I-V characteristics of a transistor laser, a decrease ("compression") in the common-emitter gain (ΒΞΔ IC Δ IB), that can be mapped in some detail and related to quantum well (QW) carrier recombination. The change in gain (Β) and laser wavelength corresponding to stimulated recombination (stimulated emission) on QW transitions, which is compared with operation in spontaneous recombination (cavity Q spoiled), is used with conventional transistor charge analysis to reveal the dynamic properties of the transistor laser.

AB - Data are presented showing significant structure in the collector I-V characteristics of a transistor laser, a decrease ("compression") in the common-emitter gain (ΒΞΔ IC Δ IB), that can be mapped in some detail and related to quantum well (QW) carrier recombination. The change in gain (Β) and laser wavelength corresponding to stimulated recombination (stimulated emission) on QW transitions, which is compared with operation in spontaneous recombination (cavity Q spoiled), is used with conventional transistor charge analysis to reveal the dynamic properties of the transistor laser.

UR - http://www.scopus.com/inward/record.url?scp=33645652491&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645652491&partnerID=8YFLogxK

U2 - 10.1063/1.2191448

DO - 10.1063/1.2191448

M3 - Article

AN - SCOPUS:33645652491

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 143508

ER -

Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser

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