Collector characteristics and the differential optical gain of a quantum-well transistor laser

H. W. Then; G. Walter; M. Feng; N. Holonyak

doi:10.1063/1.2824817

Collector characteristics and the differential optical gain of a quantum-well transistor laser

H. W. Then, G. Walter, M. Feng, N. Holonyak

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The collector electrical characteristics (I-V) of a transistor laser (TL) manifest directly the transport and recombination dynamics of the vital quantum-well (QW) base region, including as described here QW recombination state changes. By employing the continuity equations and an extension of the classic charge control model, we extract from the dc I-V characteristics the differential optical gain of a single QW TL showing the QW state changes. The results agree in form with calculations employing Fermi's golden rule and the "staircaselike" density of states of a QW.

Original language	English (US)
Article number	243508
Journal	Applied Physics Letters
Volume	91
Issue number	24
DOIs	https://doi.org/10.1063/1.2824817
State	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.2824817

Library availability

Discover UIUC Full Text

Cite this

@article{5e286ddae5924041a46e8c27136953f3,

title = "Collector characteristics and the differential optical gain of a quantum-well transistor laser",

abstract = "The collector electrical characteristics (I-V) of a transistor laser (TL) manifest directly the transport and recombination dynamics of the vital quantum-well (QW) base region, including as described here QW recombination state changes. By employing the continuity equations and an extension of the classic charge control model, we extract from the dc I-V characteristics the differential optical gain of a single QW TL showing the QW state changes. The results agree in form with calculations employing Fermi's golden rule and the {"}staircaselike{"} density of states of a QW.",

author = "Then, {H. W.} and G. Walter and M. Feng and N. Holonyak",

note = "Funding Information: The authors are grateful for the support of DARPA Contract No. HR0011-04-1-0034 (Hyper-Uniform Nano-photonics Technologies, HUNT Center). N. Holonyak, Jr. is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of Nick Holonyak, Jr., Chair of Electrical and Computer Engineering. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2007",

doi = "10.1063/1.2824817",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Collector characteristics and the differential optical gain of a quantum-well transistor laser

AU - Then, H. W.

AU - Walter, G.

AU - Feng, M.

AU - Holonyak, N.

N1 - Funding Information: The authors are grateful for the support of DARPA Contract No. HR0011-04-1-0034 (Hyper-Uniform Nano-photonics Technologies, HUNT Center). N. Holonyak, Jr. is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of Nick Holonyak, Jr., Chair of Electrical and Computer Engineering. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2007

Y1 - 2007

N2 - The collector electrical characteristics (I-V) of a transistor laser (TL) manifest directly the transport and recombination dynamics of the vital quantum-well (QW) base region, including as described here QW recombination state changes. By employing the continuity equations and an extension of the classic charge control model, we extract from the dc I-V characteristics the differential optical gain of a single QW TL showing the QW state changes. The results agree in form with calculations employing Fermi's golden rule and the "staircaselike" density of states of a QW.

AB - The collector electrical characteristics (I-V) of a transistor laser (TL) manifest directly the transport and recombination dynamics of the vital quantum-well (QW) base region, including as described here QW recombination state changes. By employing the continuity equations and an extension of the classic charge control model, we extract from the dc I-V characteristics the differential optical gain of a single QW TL showing the QW state changes. The results agree in form with calculations employing Fermi's golden rule and the "staircaselike" density of states of a QW.

UR - http://www.scopus.com/inward/record.url?scp=37149022562&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37149022562&partnerID=8YFLogxK

U2 - 10.1063/1.2824817

DO - 10.1063/1.2824817

M3 - Article

AN - SCOPUS:37149022562

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 243508

ER -

Collector characteristics and the differential optical gain of a quantum-well transistor laser

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this