TY - JOUR
T1 - Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide
AU - Diler, Berk
AU - Whiteley, Samuel J.
AU - Anderson, Christopher P.
AU - Wolfowicz, Gary
AU - Wesson, Marie E.
AU - Bielejec, Edward S.
AU - Joseph Heremans, F.
AU - Awschalom, David D.
N1 - The authors thank S. Bayliss, M. Fataftah, D.W. Laorenza, M.K. Wojnar, T. Fidler, and A. Bauer for useful discussion. This project was supported by the US Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. DOE’s National Nuclear Security Administration under contract DE-NA-0003525. The views expressed in the article do not necessarily represent the views of the U.S. DOE or the United States Government.
PY - 2020/12/1
Y1 - 2020/12/1
N2 - Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commercial 4H-SiC and show optimal defect activation after annealing above 1600 °C. We measure an ensemble optical hole linewidth of 31 MHz, an order of magnitude improvement compared to as-grown samples. An in-depth exploration of optical and spin dynamics reveals efficient spin polarization, coherent control, and readout with high fidelity (79%). We report T1 times greater than 1 s at cryogenic temperatures (15 K) with a T2 * = 317 ns and a T2 = 81 μs, where spin dephasing times are currently limited by spin–spin interactions within the defect ensemble. Our results demonstrate the potential of Cr4+ in SiC as an extrinsic, optically active spin qubit.
AB - Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commercial 4H-SiC and show optimal defect activation after annealing above 1600 °C. We measure an ensemble optical hole linewidth of 31 MHz, an order of magnitude improvement compared to as-grown samples. An in-depth exploration of optical and spin dynamics reveals efficient spin polarization, coherent control, and readout with high fidelity (79%). We report T1 times greater than 1 s at cryogenic temperatures (15 K) with a T2 * = 317 ns and a T2 = 81 μs, where spin dephasing times are currently limited by spin–spin interactions within the defect ensemble. Our results demonstrate the potential of Cr4+ in SiC as an extrinsic, optically active spin qubit.
UR - https://www.scopus.com/pages/publications/85078790402
UR - https://www.scopus.com/pages/publications/85078790402#tab=citedBy
U2 - 10.1038/s41534-020-0247-7
DO - 10.1038/s41534-020-0247-7
M3 - Article
AN - SCOPUS:85078790402
SN - 2056-6387
VL - 6
JO - npj Quantum Information
JF - npj Quantum Information
IS - 1
M1 - 11
ER -