Coarsening and slope selection during crystal growth and etching of Ge(001)

Engineering & Materials Science

• Crystal growth 100%
• Coarsening 86%
• Ions 32%
• Scanning tunneling microscopy 31%
• Surface roughness 29%
• Temperature 28%
• Molecular beam epitaxy 27%
• Epitaxial growth 24%
• Surface morphology 19%
• Aspect ratio 16%

Physics & Astronomy

• crystal growth 66%
• etching 53%
• slopes 53%
• surface roughness 29%
• low aspect ratio 24%
• scanning tunneling microscopy 17%
• ions 16%
• molecular beam epitaxy 15%
• exponents 13%
• temperature 10%
• energy 5%

Chemical Compounds

• Crystal Growth 69%
• Etching 64%
• Surface Roughness 35%
• Molecular Beam Epitaxy 25%
• Epitaxial Growth 21%
• Scanning Tunneling Microscopy 18%
• Ion 14%
• Amorphous Material 12%
• Length 10%
• Surface 5%