Coarsening and slope selection during crystal growth and etching of Ge(001)

S. Jay Chey, Joseph E. Van Nostrand, David G Cahill

Research output: Contribution to journalConference articlepeer-review

Abstract

The evolution of surface morphology during low temperature crystal growth by molecular beam epitaxy and etching by low-energy ions is characterized by in-situ scanning tunneling microscopy. Epitaxial growth of Ge(001) at low temperatures in the vicinity of 155°C produces a pattern of growth mounds while etching at temperatures near 270°C produces a pattern of low aspect ratio pits. The characteristic in-plane length scale of the surface roughness d increase with a power law dependence on time but the exponent depends on temperature and process. Prior to the onset of amorphous growth, the amplitude of the surface roughness G 1/2 (d/2) increases more rapidly than d; i.e. the slope of the sides of the growth mounds increases with time. By contrast, the ratio of G 1/2 (d/2) to d remains nearly constant during ion etching for a wide range of etching times.

Original languageEnglish (US)
Pages (from-to)221-228
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
Volume399
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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