CMOS-integrated optical receivers for on-chip interconnects

Solomon Assefa, Fengnian Xia, William M.J. Green, Clint L. Schow, Alexander V. Rylyakov, Yurii A. Vlasov

Research output: Contribution to journalArticlepeer-review

Abstract

This paper reviews recent progress on CMOS-integrated optical receivers for on-chip interconnects, which have become attractive for achieving communication bandwidth well beyond terabit-per-second with low-power consumption. The design of optical receivers and the performance metrics required from the photodetector (PD) for a low-power receiver is discussed. The progress in waveguide-integrated germanium PDs is reviewed in depth by exploring various optical/electrical designs, and the associated integration approaches for Ge films and metal contacts. The impact of design and integration on PD performance is evaluated by comparing reported results. Finally, the challenges of monolithic integration of PDs within standard CMOS process are discussed.

Original languageEnglish (US)
Article number5482019
Pages (from-to)1376-1385
Number of pages10
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume16
Issue number5
DOIs
StatePublished - Sep 1 2010
Externally publishedYes

Keywords

  • Integrated optoelectronics
  • monolithic integration
  • on-chip interconnects
  • optical communications
  • optical receivers
  • photodetectors (PDs)
  • waveguide-integrated PDs

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'CMOS-integrated optical receivers for on-chip interconnects'. Together they form a unique fingerprint.

Cite this