CMOS hot carrier lifetime improvement from deuterium anneal

E. Li, E. Rosenbaum, J. Tao, P. Fang

Research output: Contribution to conferencePaper

Abstract

The lifetime improvement factor for both NMOS and PMOS devices stressed at a variety of dc and ac bias conditions is presented. It is shown that the dc hot-carrier lifetime increased by about an order of magnitude in both NMOSFETs and PMOSFETs after D2 anneal. Ac lifetime and, in PMOS, lifetime at Vg = Vd did not show as large of an improvement. It is hypothesized that two mechanisms exist for generation of interface states and deuterium anneal is particularly effective for reducing interface state generation by hot electron bombardment.

Original languageEnglish (US)
Pages22-23
Number of pages2
StatePublished - Dec 1 1998
EventProceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA
Duration: Jun 22 1998Jun 24 1998

Other

OtherProceedings of the 1998 56th Annual Device Research Conference
CityCharlottesville, VA, USA
Period6/22/986/24/98

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Li, E., Rosenbaum, E., Tao, J., & Fang, P. (1998). CMOS hot carrier lifetime improvement from deuterium anneal. 22-23. Paper presented at Proceedings of the 1998 56th Annual Device Research Conference, Charlottesville, VA, USA, .