Abstract
The lifetime improvement factor for both NMOS and PMOS devices stressed at a variety of dc and ac bias conditions is presented. It is shown that the dc hot-carrier lifetime increased by about an order of magnitude in both NMOSFETs and PMOSFETs after D2 anneal. Ac lifetime and, in PMOS, lifetime at Vg = Vd did not show as large of an improvement. It is hypothesized that two mechanisms exist for generation of interface states and deuterium anneal is particularly effective for reducing interface state generation by hot electron bombardment.
| Original language | English (US) |
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| Pages | 22-23 |
| Number of pages | 2 |
| State | Published - 1998 |
| Event | Proceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA Duration: Jun 22 1998 → Jun 24 1998 |
Other
| Other | Proceedings of the 1998 56th Annual Device Research Conference |
|---|---|
| City | Charlottesville, VA, USA |
| Period | 6/22/98 → 6/24/98 |
ASJC Scopus subject areas
- General Engineering