@inproceedings{54d5dd51c0f14c0885c4a8c5ab92a397,
title = "CMOS-compatible on-chip self-rolled-up inductors for RF/mm-wave applications",
abstract = "On-chip copper (Cu) based self-rolled-up membrane (S-RuM) inductors are demonstrated for the first time. Compared to the gold (Au) based S-RuM inductor, device structures and fabrication processes are re-designed to realize CMOS compatibility by switching conduction metal to Cu and overcoming related processing challenges. Performance enhancements include ∼44% reduction of conduction layer resistivity compared to Au-based with the same thickness, and a clear path to 100% fabrication yield are achieved. RF measurement shows as high as ∼ 61nH/mm2 inductance density with just a 2-turn structure for these air-core S-RuM inductors. The achieved inductance is in the range from 0.3nH to 1nH. The best self-resonant-frequency (SRF) and quality factor (Q factor) of 1nH device is ∼23GHz and ∼2.4@5GHz, respectively. Much better performance can be readily obtained by rolling up more turns and integrating soft magnetic material thin film and core. Results show that Cu S-RuM inductor is very promising to replace on-chip planar inductor with better performance as a new industry standard.",
keywords = "CMOS compatible, Copper, High fabrication yield, Inductor, RF/mm-Wave frequency, Self-rolled-up",
author = "Wen Huang and Jingchao Zhou and Paul Froeter and Kathy Walsh and Siyu Liu and Julian Michaels and Moyang Li and Songbin Gong and Xiuling Li",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE MTT-S International Microwave Symposium, IMS 2017 ; Conference date: 04-06-2017 Through 09-06-2017",
year = "2017",
month = oct,
day = "4",
doi = "10.1109/MWSYM.2017.8058953",
language = "English (US)",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1645--1648",
booktitle = "2017 IEEE MTT-S International Microwave Symposium, IMS 2017",
address = "United States",
}