Abstract
The recent improvements in the performance of commodity computer have created very favorable conditions for building high performance parallel machines from computer clusters. These are very attractive for 3-D device simulation, necessary to model properly carrier-carrier interaction and granular doping effects in deeply scaled silicon devices. We have developed a parallel 3-D Monte Carlo simulation environment customized for clusters using the Message Passing Library (MPI). The code has been tested on the supercluster of NCSA at the University of Illinois. We present here test results for an n-i-n diode structure, along with an analysis of performance for two different domain decomposition schemes.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 51-56 |
| Number of pages | 6 |
| Journal | VLSI Design |
| Volume | 13 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - 2001 |
Keywords
- Device simulation
- Monte Carlo
- Parallel computation
- Semiconductors
ASJC Scopus subject areas
- Hardware and Architecture
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering