Cluster-based parallel 3-D Monte Carlo device simulation

Asim Kepkep, Umberto Ravaioli, Brian Winstead

Research output: Contribution to journalArticlepeer-review

Abstract

The recent improvements in the performance of commodity computer have created very favorable conditions for building high performance parallel machines from computer clusters. These are very attractive for 3-D device simulation, necessary to model properly carrier-carrier interaction and granular doping effects in deeply scaled silicon devices. We have developed a parallel 3-D Monte Carlo simulation environment customized for clusters using the Message Passing Library (MPI). The code has been tested on the supercluster of NCSA at the University of Illinois. We present here test results for an n-i-n diode structure, along with an analysis of performance for two different domain decomposition schemes.

Original languageEnglish (US)
Pages (from-to)51-56
Number of pages6
JournalVLSI Design
Volume13
Issue number1-4
DOIs
StatePublished - 2001

Keywords

  • Device simulation
  • Monte Carlo
  • Parallel computation
  • Semiconductors

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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