Abstract
In this paper, we present a compact electrothermal device model which can be used to simulate NMOS devices operating in the snapback regime. By incorporating temperature dependencies in the device model and using the electrothermal circuit simulator iETSIM, we are able to simulate the second breakdown of NMOS devices under EOS stress. The NMOS model also incorporates the finite breakdown time effect which is important for simulating charge device model (CDM) ESD stress events.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 316-321 |
| Number of pages | 6 |
| Journal | Electrical Overstress/Electrostatic Discharge Symposium Proceedings |
| State | Published - 1996 |
| Event | Proceedings of the 1996 Electrical Overstress/Electrostatic Discharge Symposium - Orlando, FL, USA Duration: Sep 10 1996 → Sep 12 1996 |
ASJC Scopus subject areas
- Condensed Matter Physics