Chromium diboride thin films by low temperature chemical vapor deposition

Sreenivas Jayaraman, Emily J. Klein, Yu Yang, Do Young Kim, Gregory S. Girolami, John R. Abelson

Research output: Contribution to journalArticlepeer-review


Thin films of chromium diboride, a "metallic ceramic" material with a melting point of 2200 °C, were deposited by chemical vapor deposition using a single-source precursor, the bis(octahydrotriborato)chromium(II) complex Cr (B3 H8) 2 at substrate temperatures as low as 200 °C. The films were stoichiometric, and had electrical resistivities of 105-450 μΩ cm for growth temperatures spanning a range of 200-400 °C. The film microstructure ranged from being x-ray amorphous at low growth temperatures to nanocrystalline for substrate temperatures >500 °C. The growth process was highly conformal, as determined by the film coverage profile on trenches with a depth-width ratio of 7:1.

Original languageEnglish (US)
Pages (from-to)631-633
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
StatePublished - Jul 2005

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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