TY - PAT
T1 - Chip-scale resonant gyrator for passive non-reciprocal devices
AU - Gong, Songbin
AU - Manzaneque Garcia, Tomas
AU - Lu, Ruochen
AU - Shoemaker, Daniel Philip
AU - Tu, Cheng
AU - Zhao, Chengxi
N1 - FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This disclosure was made with government support under HR0011-17-2-0004 awarded, in conjunction with the Signal Processing at Radio Frequency (SPAR) program, by the Defense Advanced Research Projects Agency's (DARPA's) Micro-Systems Technology Office. The government has certain rights in the invention.
PY - 2020/7/28
Y1 - 2020/7/28
N2 - An integrated circuit is a layered device, on a semiconductor substrate, which contains metal electrodes that sandwich a piezoelectric layer, followed by a magnetostrictive layer and a metal coil. The metal electrodes define an electrical port across which to receive an alternating current (AC) voltage, which is applied across the piezoelectric layer to cause a time-varying strain in the piezoelectric layer. The magnetostrictive layer is to translate the time-varying strain, received by way of a vibration mode from interaction with the piezoelectric layer, into a time-varying electromagnetic field. The metal coil, disposed on the magnetostrictive layer, includes a magnetic port at which to induce a current based on exposure to the time-varying electromagnetic field generated by the magnetostrictive layer.
AB - An integrated circuit is a layered device, on a semiconductor substrate, which contains metal electrodes that sandwich a piezoelectric layer, followed by a magnetostrictive layer and a metal coil. The metal electrodes define an electrical port across which to receive an alternating current (AC) voltage, which is applied across the piezoelectric layer to cause a time-varying strain in the piezoelectric layer. The magnetostrictive layer is to translate the time-varying strain, received by way of a vibration mode from interaction with the piezoelectric layer, into a time-varying electromagnetic field. The metal coil, disposed on the magnetostrictive layer, includes a magnetic port at which to induce a current based on exposure to the time-varying electromagnetic field generated by the magnetostrictive layer.
M3 - Patent
M1 - 10727804
ER -