Chemisorption properties and structural evolution of Pt-Si intermetallic thin films prepared by the activated adsorption of SiH4 on Pt(111)

Michael S. Nashner; Joseph C. Bondos; Michael J. Hosteller; Andrew A. Gewirth; Ralph G. Nuzzo

doi:10.1021/jp981398c

Chemisorption properties and structural evolution of Pt-Si intermetallic thin films prepared by the activated adsorption of SiH₄ on Pt(111)

Michael S. Nashner, Joseph C. Bondos, Michael J. Hosteller, Andrew A. Gewirth, Ralph G. Nuzzo

Research output: Contribution to journal › Article › peer-review

Abstract

The reaction of a silicon adlayer deposited on Pt(111) by chemical vapor deposition (CVD) using silane (SiH₄) is described. Data from Auger electron spectroscopy (AES) reveal that Si readily diffuses into the Pt substrate and sequentially forms at least two unique intermetallic Pt-Si surface structural phases with (√7 × √7)R19.1° and (√19 × √19)R23.4° real space unit cells as characterized by low-energy electron diffraction (LEED). The chemisorption properties of each of the ordered overlayers were studied using CO as a molecular probe. Reflection-absorption infrared spectroscopy (RAIRS) and temperature-programmed desorption (TPD) studies indicated that CO was mostly limited to chemisorption at "atop" Pt sites in the √7 phase with a significant reduction of the heat of adsorption with respect to the Pt(111) surface. The √19 phase also showed a significant modification of the chemisorption properties although it is not as pronounced as that seen for the √7 structure. The relevance of these studies to intermetallic thin film growth is discussed.

Original language	English (US)
Pages (from-to)	6202-6211
Number of pages	10
Journal	Journal of Physical Chemistry B
Volume	102
Issue number	32
DOIs	https://doi.org/10.1021/jp981398c
State	Published - Aug 6 1998

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Surfaces, Coatings and Films
Materials Chemistry

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Chemisorption properties and structural evolution of Pt-Si intermetallic thin films prepared by the activated adsorption of SiH₄ on Pt(111). / Nashner, Michael S.; Bondos, Joseph C.; Hosteller, Michael J.; Gewirth, Andrew A.; Nuzzo, Ralph G.

In: Journal of Physical Chemistry B, Vol. 102, No. 32, 06.08.1998, p. 6202-6211.

Research output: Contribution to journal › Article › peer-review

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AU - Nuzzo, Ralph G.

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N2 - The reaction of a silicon adlayer deposited on Pt(111) by chemical vapor deposition (CVD) using silane (SiH4) is described. Data from Auger electron spectroscopy (AES) reveal that Si readily diffuses into the Pt substrate and sequentially forms at least two unique intermetallic Pt-Si surface structural phases with (√7 × √7)R19.1° and (√19 × √19)R23.4° real space unit cells as characterized by low-energy electron diffraction (LEED). The chemisorption properties of each of the ordered overlayers were studied using CO as a molecular probe. Reflection-absorption infrared spectroscopy (RAIRS) and temperature-programmed desorption (TPD) studies indicated that CO was mostly limited to chemisorption at "atop" Pt sites in the √7 phase with a significant reduction of the heat of adsorption with respect to the Pt(111) surface. The √19 phase also showed a significant modification of the chemisorption properties although it is not as pronounced as that seen for the √7 structure. The relevance of these studies to intermetallic thin film growth is discussed.

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