Chemical vapor deposition of TiSi2 using SiH4 and TiCl4

M. A. Mendicino, R. P. Southwell, E. G. Seebauer

Research output: Contribution to journalArticlepeer-review


An experimental approach for optimizing process parameters for TiSi2 chemical vapor deposition is described that combines measurements under ultrahigh vacuum conditions and at normal processing pressures. This approach has given an unprecedented detailed view of the chemical mechanisms underlying this deposition system.

Original languageEnglish (US)
Pages (from-to)473-478
Number of pages6
JournalThin Solid Films
Issue number1-2
StatePublished - Dec 15 1994


  • Chemical vapour deposition
  • Growth mechanism
  • Silicides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces


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