Chemical vapor deposition of TiSi2 using SiH4 and TiCl4

M. A. Mendicino; R. P. Southwell; Edmund G Seebauer

doi:10.1016/0040-6090(94)90369-7

Chemical vapor deposition of TiSi₂ using SiH₄ and TiCl₄

M. A. Mendicino, R. P. Southwell, Edmund G Seebauer

Research output: Contribution to journal › Article › peer-review

Abstract

An experimental approach for optimizing process parameters for TiSi₂ chemical vapor deposition is described that combines measurements under ultrahigh vacuum conditions and at normal processing pressures. This approach has given an unprecedented detailed view of the chemical mechanisms underlying this deposition system.

Original language	English (US)
Pages (from-to)	473-478
Number of pages	6
Journal	Thin Solid Films
Volume	253
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(94)90369-7
State	Published - Dec 15 1994

Keywords

Chemical vapour deposition
Growth mechanism
Silicides

ASJC Scopus subject areas

Surfaces, Coatings and Films
Condensed Matter Physics
Surfaces and Interfaces

Online availability

10.1016/0040-6090(94)90369-7

Library availability

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Cite this

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title = "Chemical vapor deposition of TiSi2 using SiH4 and TiCl4 ",

abstract = "An experimental approach for optimizing process parameters for TiSi2 chemical vapor deposition is described that combines measurements under ultrahigh vacuum conditions and at normal processing pressures. This approach has given an unprecedented detailed view of the chemical mechanisms underlying this deposition system.",

keywords = "Chemical vapour deposition, Growth mechanism, Silicides",

author = "Mendicino, {M. A.} and Southwell, {R. P.} and Seebauer, {Edmund G}",

year = "1994",

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AU - Seebauer, Edmund G

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