Chemical vapor deposition of TiSi2 using SiH4 and TiCl4

M. A. Mendicino, R. P. Southwell, Edmund G Seebauer

Research output: Contribution to journalArticlepeer-review

Abstract

An experimental approach for optimizing process parameters for TiSi2 chemical vapor deposition is described that combines measurements under ultrahigh vacuum conditions and at normal processing pressures. This approach has given an unprecedented detailed view of the chemical mechanisms underlying this deposition system.

Original languageEnglish (US)
Pages (from-to)473-478
Number of pages6
JournalThin Solid Films
Volume253
Issue number1-2
DOIs
StatePublished - Dec 15 1994

Keywords

  • Chemical vapour deposition
  • Growth mechanism
  • Silicides

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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