Chemical vapor deposition of TiO2thin films from a new halogen-free precursor

Wenjiao B. Wang, Angel Yanguas-Gil, Yu Yang, Do Young Kim, Gregory S. Girolami, John R. Abelson

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TiO2films are synthesized by chemical vapor deposition using the recently synthesized precursor Ti(H3BNMe2BH3)2with H2O as the co-reactant. Films grown between 350 and 450 °C are crystalline and consist of a mixture of rutile and anatase phases; the fraction of rutile/anatase is larger at 450 °C. The films are continuous, dense, and pure, with the sum of B, C, and N impurities <1 at. %. The growth rate is ∼1.2 nm/min, limited by the precursor feed rate and therefore independent of temperature. The growth rate decreases monotonically with increasing H2O pressure due to the competition between precursor and co-reactant molecules for adsorption sites on the surface. The advantages of this system compared with other available Ti-bearing precursors are the absence of halogen and the synthesis of mixed-phase material at modest temperatures.

Original languageEnglish (US)
Article number061502
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number6
StatePublished - Nov 1 2014

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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