Chemical vapor deposition-derived graphene with electrical performance of exfoliated graphene

Nicholas Petrone, Cory R. Dean, Inanc Meric, Arend M. Van Der Zande, Pinshane Y. Huang, Lei Wang, David Muller, Kenneth L. Shepard, James Hone

Research output: Contribution to journalArticlepeer-review


While chemical vapor deposition (CVD) promises a scalable method to produce large-area graphene, CVD-grown graphene has heretofore exhibited inferior electronic properties in comparison with exfoliated samples. Here we test the electrical transport properties of CVD-grown graphene in which two important sources of disorder, namely grain boundaries and processing-induced contamination, are substantially reduced. We grow CVD graphene with grain sizes up to 250 μm to abate grain boundaries, and we transfer graphene utilizing a novel, dry-transfer method to minimize chemical contamination. We fabricate devices on both silicon dioxide and hexagonal boron nitride (h-BN) dielectrics to probe the effects of substrate-induced disorder. On both substrate types, the large-grain CVD graphene samples are comparable in quality to the best reported exfoliated samples, as determined by low-temperature electrical transport and magnetotransport measurements. Small-grain samples exhibit much greater variation in quality and inferior performance by multiple measures, even in samples exhibiting high field-effect mobility. These results confirm the possibility of achieving high-performance graphene devices based on a scalable synthesis process.

Original languageEnglish (US)
Pages (from-to)2751-2756
Number of pages6
JournalNano letters
Issue number6
StatePublished - Jun 13 2012
Externally publishedYes


  • CVD
  • Graphene
  • boron nitride
  • grain
  • mobility

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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