Chemical ordering in GaxIn1-xP semiconductor alloy grown by metalorganic vapor phase epitaxy

P. Bellon, J. P. Chevalier, G. P. Martin, E. Dupont-Nivet, C. Thiebaut, J. P. André

Research output: Contribution to journalArticlepeer-review

Abstract

GaInP films grown by metalorganic vapor phase epitaxy on GaAs substrates are observed by transmission electron microscopy in cross sections. A 1/2 (111) (CuPt type) ordering is observed, for the first time in this system, with only two orientation variants occurring. A layered structure (layer thickness 2 nm) develops parallel to the substrate and extra diffuse scattering is also observed at 2/9 (220). The observation of the 1/2 (111) ordering is not predicted by the current first-principle phase diagram calculations. Substrate effects on the orientation and number of ordering variants are identified.

Original languageEnglish (US)
Pages (from-to)567-569
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number7
DOIs
StatePublished - Jan 1 1988
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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