Chemical ordering in GaxIn1-xP semiconductor alloy grown by metalorganic vapor phase epitaxy

P. Bellon; J. P. Chevalier; G. P. Martin; E. Dupont-Nivet; C. Thiebaut; J. P. André

doi:10.1063/1.99419

Chemical ordering in Ga_xIn_1-xP semiconductor alloy grown by metalorganic vapor phase epitaxy

P. Bellon, J. P. Chevalier, G. P. Martin, E. Dupont-Nivet, C. Thiebaut, J. P. André

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Abstract

GaInP films grown by metalorganic vapor phase epitaxy on GaAs substrates are observed by transmission electron microscopy in cross sections. A 1/2 (111) (CuPt type) ordering is observed, for the first time in this system, with only two orientation variants occurring. A layered structure (layer thickness 2 nm) develops parallel to the substrate and extra diffuse scattering is also observed at 2/9 (220). The observation of the 1/2 (111) ordering is not predicted by the current first-principle phase diagram calculations. Substrate effects on the orientation and number of ordering variants are identified.

Original language	English (US)
Pages (from-to)	567-569
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	7
DOIs	https://doi.org/10.1063/1.99419
State	Published - 1988
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.99419

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Cite this

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title = "Chemical ordering in GaxIn1-xP semiconductor alloy grown by metalorganic vapor phase epitaxy",

abstract = "GaInP films grown by metalorganic vapor phase epitaxy on GaAs substrates are observed by transmission electron microscopy in cross sections. A 1/2 (111) (CuPt type) ordering is observed, for the first time in this system, with only two orientation variants occurring. A layered structure (layer thickness 2 nm) develops parallel to the substrate and extra diffuse scattering is also observed at 2/9 (220). The observation of the 1/2 (111) ordering is not predicted by the current first-principle phase diagram calculations. Substrate effects on the orientation and number of ordering variants are identified.",

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AU - Bellon, P.

AU - Chevalier, J. P.

AU - Martin, G. P.

AU - Dupont-Nivet, E.

AU - Thiebaut, C.

AU - André, J. P.

PY - 1988

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AB - GaInP films grown by metalorganic vapor phase epitaxy on GaAs substrates are observed by transmission electron microscopy in cross sections. A 1/2 (111) (CuPt type) ordering is observed, for the first time in this system, with only two orientation variants occurring. A layered structure (layer thickness 2 nm) develops parallel to the substrate and extra diffuse scattering is also observed at 2/9 (220). The observation of the 1/2 (111) ordering is not predicted by the current first-principle phase diagram calculations. Substrate effects on the orientation and number of ordering variants are identified.

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