Chemical and matrix effects on sensitivity factors in electron spectroscopies. I. C and Si containing materials

R. Ke; R. T. Haasch; N. Finnegan; L. E. Dottl; R. C. Alkire; H. H. Farrell

doi:10.1116/1.579884

Chemical and matrix effects on sensitivity factors in electron spectroscopies. I. C and Si containing materials

R. Ke, R. T. Haasch, N. Finnegan, L. E. Dottl, R. C. Alkire, H. H. Farrell

Chemical and Biomolecular Engineering

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Abstract

The dependence of Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy sensitivity factors on the detailed atomic and electronic environment has been studied for several materials containing C and/or Si. The matrices containing these elements include diamond, graphite, Si_0.5C_0.5, and Si. It was found that correcting the sensitivity factors for atomic density, electron attenuation length, and electron backscattering improved the agreement between the measured and the true composition by up to an order of magnitude except for AES transitions involving valence band electrons. The effects of changing surface composition due to oxidation and surface segregation are also discussed.

Original language	English (US)
Pages (from-to)	80-88
Number of pages	9
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	14
Issue number	1
DOIs	https://doi.org/10.1116/1.579884
State	Published - 1996

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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AU - Alkire, R. C.

AU - Farrell, H. H.

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AB - The dependence of Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy sensitivity factors on the detailed atomic and electronic environment has been studied for several materials containing C and/or Si. The matrices containing these elements include diamond, graphite, Si0.5C0.5, and Si. It was found that correcting the sensitivity factors for atomic density, electron attenuation length, and electron backscattering improved the agreement between the measured and the true composition by up to an order of magnitude except for AES transitions involving valence band electrons. The effects of changing surface composition due to oxidation and surface segregation are also discussed.

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Chemical and matrix effects on sensitivity factors in electron spectroscopies. I. C and Si containing materials

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