Chemical and matrix effects on sensitivity factors in electron spectroscopies. I. C and Si containing materials

R. Ke, R. T. Haasch, N. Finnegan, L. E. Dottl, Richard C Alkire, H. H. Farrell

Research output: Contribution to journalArticlepeer-review

Abstract

The dependence of Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy sensitivity factors on the detailed atomic and electronic environment has been studied for several materials containing C and/or Si. The matrices containing these elements include diamond, graphite, Si0.5C0.5, and Si. It was found that correcting the sensitivity factors for atomic density, electron attenuation length, and electron backscattering improved the agreement between the measured and the true composition by up to an order of magnitude except for AES transitions involving valence band electrons. The effects of changing surface composition due to oxidation and surface segregation are also discussed.

Original languageEnglish (US)
Pages (from-to)80-88
Number of pages9
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume14
Issue number1
DOIs
StatePublished - Jan 1 1996

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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