Charge trapping states at the SiO₂-oligothiophene monolayer interface in field effect transistors studied by kelvin probe force microscopy

Keyphrases

• Field-effect Transistors 100%
• Silica 100%
• Charge Trapping 100%
• Trap States 100%
• Scanning Kelvin Probe Force Microscopy (SKPFM) 100%
• Oligothiophene 100%
• 3-aminopropyltriethoxysilane 75%
• Surface Potential 50%
• Oxide Surfaces 50%
• Bulk Oxides 50%
• Exponential Transient 50%
• Gate Dielectric 25%
• Band Gap 25%
• Electronic Devices 25%
• SiO2 Surface 25%
• Time-resolved 25%
• Passivated 25%
• Surface Passivation 25%
• Soft Materials 25%
• Hydrophilic Surface 25%
• Hydroxyl Group 25%
• Local Charge 25%
• Soft Electronics 25%
• Dielectric Surface 25%
• Surface Passivation Layer 25%
• Pre-adsorption 25%
• Transient Measurement 25%
• Potential Transient 25%
• Charge Carrier Injection 25%

Engineering

• Field-Effect Transistor 100%
• Monolayers 100%
• Silicon Dioxide 100%
• Transients 75%
• Surface Potential 50%
• Surface Oxide 50%
• Gate Dielectric 25%
• Dielectrics 25%
• Passivation 25%
• Soft Material 25%
• Hydrophilic Surface 25%
• Passivation Layer 25%
• Preadsorption 25%
• Band Gap 25%
• Charge Carrier 25%

Material Science

• Field Effect Transistor 100%
• Monolayers 100%
• Charge Trapping 100%
• Surface (Surface Science) 75%
• Oxide Compound 50%
• Surface Passivation 50%
• Oxide Surface 50%
• Dielectric Material 50%
• Charge Carrier 25%