Abstract
Ultrahigh vacuum (UHV) scanning tunnelling microscopy (STM) and spectroscopy (STS) have been used to examine the role of substrate doping and composition in determining the electronic behaviour of semiconducting single-walled carbon nanotubes (SWNT) deposited onto III-V(110) surfaces. Hybrid SWNT/III-V(110) systems were created through sample cleavage and subsequent nanotube transfer in UHV. Room temperature STS spectra indicate electron transfer from the n-GaAs substrate to the supported SWNT and from the SWNT to the p-GaAs substrate, resulting in the respective n-type and p-type doping of the nanotube upon adsorption. STS measurements on InAs(110) supported carbon nanotubes are less uniform, with selected SWNTs on the n-InAs(110) surface exhibiting distinct electronic changes when shifted into registration with the substrate lattice. No such orientation sensitivity is detected in nanotubes on GaAs surfaces. The potential for systematic modification of a SWNT's electronic behaviour through intentional substrate engineering could present a new avenue for the design and fabrication of nanotube-based device structures.
| Original language | English (US) |
|---|---|
| Article number | 215202 |
| Journal | Nanotechnology |
| Volume | 18 |
| Issue number | 21 |
| DOIs | |
| State | Published - May 30 2007 |
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ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering
Cite this
Charge transfer between semiconducting carbon nanotubes and their doped GaAs(110) and InAs(110) substrates detected by scanning tunnelling spectroscopy. / Ruppalt, Laura B.; Lyding, Joseph W.
In: Nanotechnology, Vol. 18, No. 21, 215202, 30.05.2007.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Charge transfer between semiconducting carbon nanotubes and their doped GaAs(110) and InAs(110) substrates detected by scanning tunnelling spectroscopy
AU - Ruppalt, Laura B.
AU - Lyding, Joseph W.
PY - 2007/5/30
Y1 - 2007/5/30
N2 - Ultrahigh vacuum (UHV) scanning tunnelling microscopy (STM) and spectroscopy (STS) have been used to examine the role of substrate doping and composition in determining the electronic behaviour of semiconducting single-walled carbon nanotubes (SWNT) deposited onto III-V(110) surfaces. Hybrid SWNT/III-V(110) systems were created through sample cleavage and subsequent nanotube transfer in UHV. Room temperature STS spectra indicate electron transfer from the n-GaAs substrate to the supported SWNT and from the SWNT to the p-GaAs substrate, resulting in the respective n-type and p-type doping of the nanotube upon adsorption. STS measurements on InAs(110) supported carbon nanotubes are less uniform, with selected SWNTs on the n-InAs(110) surface exhibiting distinct electronic changes when shifted into registration with the substrate lattice. No such orientation sensitivity is detected in nanotubes on GaAs surfaces. The potential for systematic modification of a SWNT's electronic behaviour through intentional substrate engineering could present a new avenue for the design and fabrication of nanotube-based device structures.
AB - Ultrahigh vacuum (UHV) scanning tunnelling microscopy (STM) and spectroscopy (STS) have been used to examine the role of substrate doping and composition in determining the electronic behaviour of semiconducting single-walled carbon nanotubes (SWNT) deposited onto III-V(110) surfaces. Hybrid SWNT/III-V(110) systems were created through sample cleavage and subsequent nanotube transfer in UHV. Room temperature STS spectra indicate electron transfer from the n-GaAs substrate to the supported SWNT and from the SWNT to the p-GaAs substrate, resulting in the respective n-type and p-type doping of the nanotube upon adsorption. STS measurements on InAs(110) supported carbon nanotubes are less uniform, with selected SWNTs on the n-InAs(110) surface exhibiting distinct electronic changes when shifted into registration with the substrate lattice. No such orientation sensitivity is detected in nanotubes on GaAs surfaces. The potential for systematic modification of a SWNT's electronic behaviour through intentional substrate engineering could present a new avenue for the design and fabrication of nanotube-based device structures.
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U2 - 10.1088/0957-4484/18/21/215202
DO - 10.1088/0957-4484/18/21/215202
M3 - Article
AN - SCOPUS:34247859006
VL - 18
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 21
M1 - 215202
ER -