Charge transfer between semiconducting carbon nanotubes and their doped GaAs(110) and InAs(110) substrates detected by scanning tunnelling spectroscopy

Laura B. Ruppalt, Joseph W. Lyding

Research output: Contribution to journalArticle

Abstract

Ultrahigh vacuum (UHV) scanning tunnelling microscopy (STM) and spectroscopy (STS) have been used to examine the role of substrate doping and composition in determining the electronic behaviour of semiconducting single-walled carbon nanotubes (SWNT) deposited onto III-V(110) surfaces. Hybrid SWNT/III-V(110) systems were created through sample cleavage and subsequent nanotube transfer in UHV. Room temperature STS spectra indicate electron transfer from the n-GaAs substrate to the supported SWNT and from the SWNT to the p-GaAs substrate, resulting in the respective n-type and p-type doping of the nanotube upon adsorption. STS measurements on InAs(110) supported carbon nanotubes are less uniform, with selected SWNTs on the n-InAs(110) surface exhibiting distinct electronic changes when shifted into registration with the substrate lattice. No such orientation sensitivity is detected in nanotubes on GaAs surfaces. The potential for systematic modification of a SWNT's electronic behaviour through intentional substrate engineering could present a new avenue for the design and fabrication of nanotube-based device structures.

Original languageEnglish (US)
Article number215202
JournalNanotechnology
Volume18
Issue number21
DOIs
StatePublished - May 30 2007

Fingerprint

Carbon Nanotubes
Charge transfer
Single-walled carbon nanotubes (SWCN)
Carbon nanotubes
Nanotubes
Spectroscopy
Scanning
Substrates
Ultrahigh vacuum
Doping (additives)
Scanning tunneling microscopy
gallium arsenide
indium arsenide
Adsorption
Fabrication
Electrons
Chemical analysis
Temperature

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

@article{36b62b167d134c2aace98cf26b1d1be2,
title = "Charge transfer between semiconducting carbon nanotubes and their doped GaAs(110) and InAs(110) substrates detected by scanning tunnelling spectroscopy",
abstract = "Ultrahigh vacuum (UHV) scanning tunnelling microscopy (STM) and spectroscopy (STS) have been used to examine the role of substrate doping and composition in determining the electronic behaviour of semiconducting single-walled carbon nanotubes (SWNT) deposited onto III-V(110) surfaces. Hybrid SWNT/III-V(110) systems were created through sample cleavage and subsequent nanotube transfer in UHV. Room temperature STS spectra indicate electron transfer from the n-GaAs substrate to the supported SWNT and from the SWNT to the p-GaAs substrate, resulting in the respective n-type and p-type doping of the nanotube upon adsorption. STS measurements on InAs(110) supported carbon nanotubes are less uniform, with selected SWNTs on the n-InAs(110) surface exhibiting distinct electronic changes when shifted into registration with the substrate lattice. No such orientation sensitivity is detected in nanotubes on GaAs surfaces. The potential for systematic modification of a SWNT's electronic behaviour through intentional substrate engineering could present a new avenue for the design and fabrication of nanotube-based device structures.",
author = "Ruppalt, {Laura B.} and Lyding, {Joseph W.}",
year = "2007",
month = "5",
day = "30",
doi = "10.1088/0957-4484/18/21/215202",
language = "English (US)",
volume = "18",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "21",

}

TY - JOUR

T1 - Charge transfer between semiconducting carbon nanotubes and their doped GaAs(110) and InAs(110) substrates detected by scanning tunnelling spectroscopy

AU - Ruppalt, Laura B.

AU - Lyding, Joseph W.

PY - 2007/5/30

Y1 - 2007/5/30

N2 - Ultrahigh vacuum (UHV) scanning tunnelling microscopy (STM) and spectroscopy (STS) have been used to examine the role of substrate doping and composition in determining the electronic behaviour of semiconducting single-walled carbon nanotubes (SWNT) deposited onto III-V(110) surfaces. Hybrid SWNT/III-V(110) systems were created through sample cleavage and subsequent nanotube transfer in UHV. Room temperature STS spectra indicate electron transfer from the n-GaAs substrate to the supported SWNT and from the SWNT to the p-GaAs substrate, resulting in the respective n-type and p-type doping of the nanotube upon adsorption. STS measurements on InAs(110) supported carbon nanotubes are less uniform, with selected SWNTs on the n-InAs(110) surface exhibiting distinct electronic changes when shifted into registration with the substrate lattice. No such orientation sensitivity is detected in nanotubes on GaAs surfaces. The potential for systematic modification of a SWNT's electronic behaviour through intentional substrate engineering could present a new avenue for the design and fabrication of nanotube-based device structures.

AB - Ultrahigh vacuum (UHV) scanning tunnelling microscopy (STM) and spectroscopy (STS) have been used to examine the role of substrate doping and composition in determining the electronic behaviour of semiconducting single-walled carbon nanotubes (SWNT) deposited onto III-V(110) surfaces. Hybrid SWNT/III-V(110) systems were created through sample cleavage and subsequent nanotube transfer in UHV. Room temperature STS spectra indicate electron transfer from the n-GaAs substrate to the supported SWNT and from the SWNT to the p-GaAs substrate, resulting in the respective n-type and p-type doping of the nanotube upon adsorption. STS measurements on InAs(110) supported carbon nanotubes are less uniform, with selected SWNTs on the n-InAs(110) surface exhibiting distinct electronic changes when shifted into registration with the substrate lattice. No such orientation sensitivity is detected in nanotubes on GaAs surfaces. The potential for systematic modification of a SWNT's electronic behaviour through intentional substrate engineering could present a new avenue for the design and fabrication of nanotube-based device structures.

UR - http://www.scopus.com/inward/record.url?scp=34247859006&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247859006&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/18/21/215202

DO - 10.1088/0957-4484/18/21/215202

M3 - Article

AN - SCOPUS:34247859006

VL - 18

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 21

M1 - 215202

ER -