Charge dynamics at the silicon(001) surface studied by scanning tunneling microscopy and surface photovoltage

D. G. Cahill; R. J. Hamers

Charge dynamics at the silicon(001) surface studied by scanning tunneling microscopy and surface photovoltage

Research output: Contribution to journal › Article › peer-review

Abstract

Scanning tunneling microscopy measurements of local surface photovoltage of the Si(001) surface reveal the existence of local charging produced by the tunneling current. Since the tunneling current is confined to a region of near atomic dimensions, charge transport between surface and bulk electronic states is probed with high spatial resolution. The surface charge is enhanced while tunneling at the bonded, type-B atomic step and at specific point defects demonstrating atomic-scale variations in the charge dynamics.

Original language	English (US)
Pages (from-to)	931-936
Number of pages	6
Journal	Scanning microscopy
Volume	6
Issue number	4
State	Published - Dec 1 1992

ASJC Scopus subject areas

Instrumentation

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title = "Charge dynamics at the silicon(001) surface studied by scanning tunneling microscopy and surface photovoltage",

abstract = "Scanning tunneling microscopy measurements of local surface photovoltage of the Si(001) surface reveal the existence of local charging produced by the tunneling current. Since the tunneling current is confined to a region of near atomic dimensions, charge transport between surface and bulk electronic states is probed with high spatial resolution. The surface charge is enhanced while tunneling at the bonded, type-B atomic step and at specific point defects demonstrating atomic-scale variations in the charge dynamics.",

author = "Cahill, {D. G.} and Hamers, {R. J.}",

year = "1992",

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AU - Hamers, R. J.

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N2 - Scanning tunneling microscopy measurements of local surface photovoltage of the Si(001) surface reveal the existence of local charging produced by the tunneling current. Since the tunneling current is confined to a region of near atomic dimensions, charge transport between surface and bulk electronic states is probed with high spatial resolution. The surface charge is enhanced while tunneling at the bonded, type-B atomic step and at specific point defects demonstrating atomic-scale variations in the charge dynamics.

AB - Scanning tunneling microscopy measurements of local surface photovoltage of the Si(001) surface reveal the existence of local charging produced by the tunneling current. Since the tunneling current is confined to a region of near atomic dimensions, charge transport between surface and bulk electronic states is probed with high spatial resolution. The surface charge is enhanced while tunneling at the bonded, type-B atomic step and at specific point defects demonstrating atomic-scale variations in the charge dynamics.

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Charge dynamics at the silicon(001) surface studied by scanning tunneling microscopy and surface photovoltage

Abstract

ASJC Scopus subject areas

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