Charge dynamics at the silicon(001) surface studied by scanning tunneling microscopy and surface photovoltage

D. G. Cahill, R. J. Hamers

Research output: Contribution to journalArticlepeer-review

Abstract

Scanning tunneling microscopy measurements of local surface photovoltage of the Si(001) surface reveal the existence of local charging produced by the tunneling current. Since the tunneling current is confined to a region of near atomic dimensions, charge transport between surface and bulk electronic states is probed with high spatial resolution. The surface charge is enhanced while tunneling at the bonded, type-B atomic step and at specific point defects demonstrating atomic-scale variations in the charge dynamics.

Original languageEnglish (US)
Pages (from-to)931-936
Number of pages6
JournalScanning microscopy
Volume6
Issue number4
StatePublished - Dec 1 1992

ASJC Scopus subject areas

  • Instrumentation

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