Abstract
Scanning tunneling microscopy measurements of local surface photovoltage of the Si(001) surface reveal the existence of local charging produced by the tunneling current. Since the tunneling current is confined to a region of near atomic dimensions, charge transport between surface and bulk electronic states is probed with high spatial resolution. The surface charge is enhanced while tunneling at the bonded, type-B atomic step and at specific point defects demonstrating atomic-scale variations in the charge dynamics.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 931-936 |
| Number of pages | 6 |
| Journal | Scanning microscopy |
| Volume | 6 |
| Issue number | 4 |
| State | Published - Dec 1992 |
ASJC Scopus subject areas
- Instrumentation