Charge distribution on thin semiconducting silicon nanowires

Hui Chen, Subrata Mukherjee, Narayan Aluru

Research output: Contribution to journalArticlepeer-review


The subject of this paper is the calculation of charge distribution on and inside thin semiconducting silicon nanowires in electrostatic problems, by a coupled finite and boundary element method (FEM/BEM). A hybrid semi-classical (Laplace/Poisson) model is employed and a line model (with finite thickness) for a silicon nanowire of circular cross-section is proposed here. This model overcomes the problem of dealing with nearly singular matrices that occur when the standard BEM is applied to very thin features (objects or gaps). This new approach is also very efficient. Numerical results are presented for selected examples.

Original languageEnglish (US)
Pages (from-to)3366-3377
Number of pages12
JournalComputer Methods in Applied Mechanics and Engineering
Issue number41-42
StatePublished - Jul 1 2008


  • Boundary element method
  • Charge distribution
  • Finite element method
  • Semiconducting silicon nanowires

ASJC Scopus subject areas

  • Computer Science Applications
  • Computational Mechanics


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