TY - JOUR
T1 - Charge distribution on thin semiconducting silicon nanowires
AU - Chen, Hui
AU - Mukherjee, Subrata
AU - Aluru, Narayan
N1 - Funding Information:
This research has been supported by Grant #s EEC-0303674 and CMS-0508466 of the National Science Foundation to Cornell University.
PY - 2008/7/1
Y1 - 2008/7/1
N2 - The subject of this paper is the calculation of charge distribution on and inside thin semiconducting silicon nanowires in electrostatic problems, by a coupled finite and boundary element method (FEM/BEM). A hybrid semi-classical (Laplace/Poisson) model is employed and a line model (with finite thickness) for a silicon nanowire of circular cross-section is proposed here. This model overcomes the problem of dealing with nearly singular matrices that occur when the standard BEM is applied to very thin features (objects or gaps). This new approach is also very efficient. Numerical results are presented for selected examples.
AB - The subject of this paper is the calculation of charge distribution on and inside thin semiconducting silicon nanowires in electrostatic problems, by a coupled finite and boundary element method (FEM/BEM). A hybrid semi-classical (Laplace/Poisson) model is employed and a line model (with finite thickness) for a silicon nanowire of circular cross-section is proposed here. This model overcomes the problem of dealing with nearly singular matrices that occur when the standard BEM is applied to very thin features (objects or gaps). This new approach is also very efficient. Numerical results are presented for selected examples.
KW - Boundary element method
KW - Charge distribution
KW - Finite element method
KW - Semiconducting silicon nanowires
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U2 - 10.1016/j.cma.2008.02.007
DO - 10.1016/j.cma.2008.02.007
M3 - Article
AN - SCOPUS:48049124068
SN - 0045-7825
VL - 197
SP - 3366
EP - 3377
JO - Computer Methods in Applied Mechanics and Engineering
JF - Computer Methods in Applied Mechanics and Engineering
IS - 41-42
ER -