Characterization of skin effect in high-speed interconnects and spiral inductors

Fethi Choubani, José Schutt-Ainé, Richard Baca

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Wireless communication systems are expanding rapidly leading to the proliferation of RF applications in the UHF band (0.9-3 GHz). However stringent requirements are placed to make it essential for these applications to conform to strict technical standards and attain a high level of integration. These demands including low cost, low voltage, low power dissipation, low noise and low distortion cannot be achieved without fabricating high quality passive devices in the same substrate using the same technology. Therefore, recent advances in Bipolar, CMOS and BiCMOS processes have stimulated new approaches to circuit integration and architecture. This has included high conductivity multi-metal layers, low loss substrates and thick oxide to isolate components from lossy substrates. In parallel, with the insight gained from these investigations, simplified physical models and various numerical techniques have been developed to assess the performance of passive devices such as transmission lines and spiral inductors. Unfortunately, these approaches are not easily implemented in CAD tools and sometimes suffer from incompleteness. In fact, in many instances, circuits are successfully simulated but actual prototypes often fail to match the simulated results because of parasitic effects. This work describes the characterization of embedded transmission lines (ETL) and spiral inductors using scattering parameter measurements. A simple approximation allows for the extraction of the devices characteristics, taking into account capacitive and inductive coupling as well as losses. Thus calculations can be easily and quickly performed using these models.

Original languageEnglish (US)
Title of host publication54th ARFTG Conference Digest Fall 1999
Subtitle of host publicationAutomatic RF Techniques Group: Characterization of Broadband Access Technologies, ARFTG Fall 1999
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)0780356861, 9780780356863
DOIs
StatePublished - Jan 1 1999
Event54th Automatic RF Techniques Group, ARFTG Fall 1999 - Atlanta, United States
Duration: Dec 2 1999Dec 3 1999

Publication series

Name54th ARFTG Conference Digest Fall 1999: Automatic RF Techniques Group: Characterization of Broadband Access Technologies, ARFTG Fall 1999

Other

Other54th Automatic RF Techniques Group, ARFTG Fall 1999
CountryUnited States
CityAtlanta
Period12/2/9912/3/99

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation

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    Choubani, F., Schutt-Ainé, J., & Baca, R. (1999). Characterization of skin effect in high-speed interconnects and spiral inductors. In 54th ARFTG Conference Digest Fall 1999: Automatic RF Techniques Group: Characterization of Broadband Access Technologies, ARFTG Fall 1999 [4120065] (54th ARFTG Conference Digest Fall 1999: Automatic RF Techniques Group: Characterization of Broadband Access Technologies, ARFTG Fall 1999). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ARFTG.1999.327363