Characterization of selective reactive ion etching effects on delta-doped GaAs/AlGaAs MODFET layers

Keyphrases

• Field-effect Transistors 100%
• Modulation-doped 100%
• GaAs-AlGaAs 100%
• Reactive Ion Etching 100%
• Delta Doping 100%
• Etching Effect 100%
• Modulation-doped Field-effect Transistor (MODFET) 80%
• Doped Structure 40%
• Gallium Arsenide 20%
• Transport Properties 20%
• Transistor Structure 20%
• Transistor Device 20%
• Current Gain Cutoff Frequency 20%
• Small Changes 20%
• Extrinsic Transconductance 20%
• 2-dimensional Electron Gas (2DEG) 20%
• Carrier Density 20%
• Carrier Mobility 20%
• High-frequency Measurements 20%
• Low-energy Ion Bombardment 20%
• Threshold Voltage 20%
• Direct Current 20%
• Hall Measurement 20%
• SiCl4 20%
• Self-bias Voltage 20%
• SiF4 20%
• Gate Recess 20%

Engineering

• Field-Effect Transistor 100%
• Aluminium Gallium Arsenide 100%
• Doped Gaas 100%
• Two Dimensional 50%
• Significant Change 50%
• Ion Implantation 50%
• Current Gain 50%
• Etching Process 50%
• Cutoff Frequency 50%
• Bias Voltage 50%
• Carrier Density 50%
• Carrier Mobility 50%
• Direct Current 50%