The electrical characteristics of Re Schottky contacts on AlxGa1-xN (x = 0, 0.15, 0.22 and 0.26) grown by MOCVD on sapphire substrates have been investigated. The effective barrier heights were obtained from current-voltage and capacitance-voltage measurements and were found to increase with aluminum concentration.
|Original language||English (US)|
|Number of pages||2|
|State||Published - Apr 29 1999|
ASJC Scopus subject areas
- Electrical and Electronic Engineering