Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes

A. T. Ping, A. C. Schmitz, I. Adesida, M. Asif Khan, Q. Chen, J. W. Yang

Research output: Contribution to journalArticlepeer-review


Dry etch-induced damage has been investigated using Pd Schottky diodes fabricated on n-type GaN surfaces that were etched by reactive ion etching in SiCl4 and Ar plasmas. Damage was evaluated by measuring the current-voltage, current-voltage-temperature, and capacitance-voltage characteristics of the diodes. A plasma chemistry that includes a chemical etching component (SiCl4) was found to significantly reduce the degree of induced damage in comparison to a chemistry that uses only a physical component (Ar). The effective barrier height, ideality factor, reverse breakdown voltage, reverse leakage current, and the effective Richardson coefficient of diodes etched under various plasma conditions are presented. The degree of etch-induced damage was found to depend strongly on the plasma self-bias voltage but saturates with etch time after an initial two-minute etch period. Rapid thermal annealing was found to be effective in improving the diode characteristics of the etched GaN samples.

Original languageEnglish (US)
Pages (from-to)266-271
Number of pages6
JournalJournal of Electronic Materials
Issue number3
StatePublished - Mar 1997
Externally publishedYes


  • GaN
  • Reactive ion etching
  • Schottky diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes'. Together they form a unique fingerprint.

Cite this