Characterization of magnetron-sputtered partially ionized deposition as a function of metal and gas species

Effective utilization to fill trenches and vias with high aspect ratios of ionized metal fluxes were demonstrated by conventional magnetron sputter deposition with a rf inductively coupled plasma (ICP). The ICP was created with a seven turn, water cooled coil located between the magnetron cathode and the substrate. A gridded analyzer configured with a quartz crystal microbalance was located in the center of the substrate plane to determine the ion and neutral deposition rates. Deposition rates and ionization fractions were obtained under varying conditions. Results indicated that the ICP coil provide plasma throughout a larger volume and raising the electron temperature and density, which lead to increased ionization of the sputtered metal flux.