Characterization of ion-implanted In_xGa_1-xAs/GaAs 0.25 μm gate metal semiconductor field-effect transistors with F _t>100 GHz

Keyphrases

• Gate Metal 100%
• Gallium Arsenide 100%
• InxGa1-xAs 100%
• Low Field 100%
• Ion Implantation 100%
• MESFET 100%
• InGaAs 50%
• High Field 50%
• Transistor Device 50%
• Gate Length 50%
• Current Gain Cutoff Frequency 50%
• Electron Velocity 50%
• Electron Mobility 50%
• Hall Mobility 50%
• Fmax 50%
• Maximum Oscillation Frequency 50%
• Field Velocity 50%
• GHz Frequency 50%
• Millimeter Wave 50%
• Mobility Data 50%

Engineering

• Field-Effect Transistor 100%
• Metal Gate 100%
• Gallium Arsenide 100%
• Indium Gallium Arsenide 50%
• Current Gain 50%
• Gate Length 50%
• Cutoff Frequency 50%
• Electron Velocity 50%
• Measured Data 50%
• Velocity Field 50%
• Millimeter Wave 50%

Material Science

• Field Effect Transistor 100%
• Gallium Arsenide 100%
• Indium Gallium Arsenide 50%
• Electron Mobility 50%
• Hall Mobility 50%