Characterization of ion-implanted InxGa1-xAs/GaAs 0.25 μm gate metal semiconductor field-effect transistors with F t>100 GHz

M. Feng, J. Laskar, W. Miller, J. Kolodzey, G. E. Stillman, C. L. Lau

Research output: Contribution to journal › Article › peer-review

Fingerprint

Dive into the research topics of 'Characterization of ion-implanted In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs 0.25 μm gate metal semiconductor field-effect transistors with F <sub>t</sub>>100 GHz'. Together they form a unique fingerprint.

Physics & Astronomy