Characterization of ion-implanted InxGa1-xAs/GaAs 0.25 μm gate metal semiconductor field-effect transistors with F t>100 GHz

M. Feng, J. Laskar, W. Miller, J. Kolodzey, G. E. Stillman, C. L. Lau

Research output: Contribution to journalArticlepeer-review

Abstract

This work presents millimeter wave performance achieved by ion-implanted InGaAs/GaAs metal semiconductor field-effect transistor devices. A current gain cutoff frequency ft of 126 GHz and maximum frequency of oscillation fmax of 232 GHz have been measured for 0.20 μm gate length devices. The ft and low-field Hall mobility data, measured at 300 and 112 K, lead us to conclude that the average electron velocity under the gate is mainly due to the high-field velocity rather than low-field electron mobility.

Original languageEnglish (US)
Pages (from-to)2690-2691
Number of pages2
JournalApplied Physics Letters
Volume58
Issue number23
DOIs
StatePublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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