CHARACTERIZATION OF ION IMPLANTED GaAs SUPER LOW NOISE FIELD EFFECT TRANSISTOR.

M. Feng, H. Kanber, V. Eu, G. Cervantes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
PublisherInst of Physics
Pages325-332
Number of pages8
Edition65
ISBN (Print)085498156X
StatePublished - Dec 1 1983
Externally publishedYes

Publication series

NameInstitute of Physics Conference Series
Number65
ISSN (Print)0373-0751

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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