Characterization of germanium-silicon alloy thin films grown by laser-photochemical vapor deposition.

H. H. Burke, I. P. Herman, S. A. Piette, V. Tavitian, J. Gary Eden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Both the conventional pyrolytic and laser-photochemical growth of amorphous and polycrystalline Ge-Si alloy thin films on various substrates have been investigated. Bulk and thin-film studies have determined the characteristic three-peak Raman spectrum of Ge-Si alloys. The spectrum consists of peaks near 300, 400, and 500 cm-1 corresponding to local modes of Ge-Ge, Ge-Si, and Si-Si atoms, respectively. The peak positions, widths, and intensities are dependent on the alloy composition, crystallinity, and homogeneity. In addition, the peak positions are influenced by the degree of strain in the alloy film. The films have been analyzed ex situ by Raman scattering and Auger electron spectroscopy.

Original languageEnglish (US)
Title of host publicationCLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7
PublisherPubl by IEEE
Number of pages1
ISBN (Print)155752033X
StatePublished - Dec 1 1988
Externally publishedYes

Publication series

NameCLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Burke, H. H., Herman, I. P., Piette, S. A., Tavitian, V., & Eden, J. G. (1988). Characterization of germanium-silicon alloy thin films grown by laser-photochemical vapor deposition. In CLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7 (CLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7). Publ by IEEE.