Characterization of GaAs grown by molecular beam epitaxy on vicinal Ge(100) substrates

A. Wan, V. Menon, S. R. Forrest, D. Wasserman, S. A. Lyon, A. Kahn

Research output: Contribution to journalArticle

Abstract

The growth of GaAs and Ge on the substrates of vicinal Ge (100) surfaces was analyzed using molecular beam epitaxy. The GaAs films exhibited low energy electron diffraction (LEED), low temperature photoluminescence and scanning electron microscopy. It was found that the Ge buffer layers on Ge (100) substrate orientations were prepared with regular arrays of double steps. It was observed that the GaAs grown on Ge (111) were smooth and of high crystalline quality while GaAs grown on GE (110) exhibited poor morphology and crystalline quality.

Original languageEnglish (US)
Pages (from-to)1893-1898
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number4
DOIs
StatePublished - Jul 1 2004

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Characterization of GaAs grown by molecular beam epitaxy on vicinal Ge(100) substrates'. Together they form a unique fingerprint.

  • Cite this