The growth of GaAs and Ge on the substrates of vicinal Ge (100) surfaces was analyzed using molecular beam epitaxy. The GaAs films exhibited low energy electron diffraction (LEED), low temperature photoluminescence and scanning electron microscopy. It was found that the Ge buffer layers on Ge (100) substrate orientations were prepared with regular arrays of double steps. It was observed that the GaAs grown on Ge (111) were smooth and of high crystalline quality while GaAs grown on GE (110) exhibited poor morphology and crystalline quality.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jul 1 2004|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering