Characterization of dislocation loops in CeO2 irradiated with high energy Krypton and Xenon

Wei Ying Chen, Jianguo Wen, Marquis A. Kirk, Yinbin Miao, Bei Ye, Brian R. Kleinfeldt, Aaron J. Oaks, James F. Stubbins

Research output: Contribution to journalArticle

Abstract

In order to fully characterize the structure of dislocation loops in CeO2, ion irradiations have been performed at 800 °C on CeO 2 single-crystal thin films individually using 1MeV Kr ions and 150 keV Xe ions, both to a dose of 5×1014 ions/cm2. Post-irradiation TEM examination, diffraction contrast imaging and high-resolution transmission electron microscopy (HRTEM), has confirmed that the irradiation-induced dislocation loops in CeO2 were Frank loops, having an interstitial nature with {1 1 1} habit planes and a 1/3<111> Burgers vector. Dislocation loops were confirmed to be a stacking fault in nature through TEM observations of the interference fringes inside the loop periphery.

Original languageEnglish (US)
Pages (from-to)4569-4581
Number of pages13
JournalPhilosophical Magazine
Volume93
Issue number36
DOIs
StatePublished - Dec 1 2013

    Fingerprint

Keywords

  • Dislocations
  • Electron microscopy
  • Ion irradiation
  • Irradiation effects
  • Nuclear materials
  • Oxide thin films

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this