Characterization of Au and Al segregation layer in post-annealed thin Ti/Al/Mo/Au Ohmic contacts to n-GaN

Liang Wang; Fitih M. Mohammed; Ilesanmi Adesida

doi:10.1063/1.2132089

Characterization of Au and Al segregation layer in post-annealed thin Ti/Al/Mo/Au Ohmic contacts to n-GaN

Liang Wang, Fitih M. Mohammed, Ilesanmi Adesida

Office of the Provost

Research output: Contribution to journal › Article › peer-review

Abstract

The post-annealed interfacial microstructures of thin TiAlMoAu metallization on n-GaN were investigated using analytical transmission electron microscopy. A 5-20-nm -thick continuous TiN layer was observed to have been formed due to the reaction between Ti and GaN. A continuous Au and Al segregation with a narrow thickness occurring exactly at the TiNGaN interface was identified. Detailed structure and composition of the segregation layer were characterized. It is noted that despite the presence of Au at the interfacial region, an excellent Ohmic contact resistance was obtained. It suggests that the segregation of Au at the semiconductormetal interface does not necessarily have detrimental effects on contact performance.

Original language	English (US)
Article number	106105
Journal	Journal of Applied Physics
Volume	98
Issue number	10
DOIs	https://doi.org/10.1063/1.2132089
State	Published - Nov 15 2005

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.2132089

Fingerprint Dive into the research topics of 'Characterization of Au and Al segregation layer in post-annealed thin Ti/Al/Mo/Au Ohmic contacts to n-GaN'. Together they form a unique fingerprint.

Cite this

@article{bb19abbf42c3419ab14c9189fea744ff,

title = "Characterization of Au and Al segregation layer in post-annealed thin Ti/Al/Mo/Au Ohmic contacts to n-GaN",

abstract = "The post-annealed interfacial microstructures of thin TiAlMoAu metallization on n-GaN were investigated using analytical transmission electron microscopy. A 5-20-nm -thick continuous TiN layer was observed to have been formed due to the reaction between Ti and GaN. A continuous Au and Al segregation with a narrow thickness occurring exactly at the TiNGaN interface was identified. Detailed structure and composition of the segregation layer were characterized. It is noted that despite the presence of Au at the interfacial region, an excellent Ohmic contact resistance was obtained. It suggests that the segregation of Au at the semiconductormetal interface does not necessarily have detrimental effects on contact performance.",

author = "Liang Wang and Mohammed, {Fitih M.} and Ilesanmi Adesida",

note = "Funding Information: This work was supported by ONR Grant Nos. N00014-01-1-100 and N00014-01-1-1072 (Monitor: H. Dietrich). TEM analyses were carried out at the Center for Microanalysis of Materials, University of Illinois (DOE: DEFG02-91-ER45439). The assistance of R. Twesten, J. G. Wen, and C. H. Lei on the TEM is acknowledged.",

year = "2005",

month = nov,

day = "15",

doi = "10.1063/1.2132089",

language = "English (US)",

volume = "98",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Characterization of Au and Al segregation layer in post-annealed thin Ti/Al/Mo/Au Ohmic contacts to n-GaN

AU - Wang, Liang

AU - Mohammed, Fitih M.

AU - Adesida, Ilesanmi

N1 - Funding Information: This work was supported by ONR Grant Nos. N00014-01-1-100 and N00014-01-1-1072 (Monitor: H. Dietrich). TEM analyses were carried out at the Center for Microanalysis of Materials, University of Illinois (DOE: DEFG02-91-ER45439). The assistance of R. Twesten, J. G. Wen, and C. H. Lei on the TEM is acknowledged.

PY - 2005/11/15

Y1 - 2005/11/15

N2 - The post-annealed interfacial microstructures of thin TiAlMoAu metallization on n-GaN were investigated using analytical transmission electron microscopy. A 5-20-nm -thick continuous TiN layer was observed to have been formed due to the reaction between Ti and GaN. A continuous Au and Al segregation with a narrow thickness occurring exactly at the TiNGaN interface was identified. Detailed structure and composition of the segregation layer were characterized. It is noted that despite the presence of Au at the interfacial region, an excellent Ohmic contact resistance was obtained. It suggests that the segregation of Au at the semiconductormetal interface does not necessarily have detrimental effects on contact performance.

AB - The post-annealed interfacial microstructures of thin TiAlMoAu metallization on n-GaN were investigated using analytical transmission electron microscopy. A 5-20-nm -thick continuous TiN layer was observed to have been formed due to the reaction between Ti and GaN. A continuous Au and Al segregation with a narrow thickness occurring exactly at the TiNGaN interface was identified. Detailed structure and composition of the segregation layer were characterized. It is noted that despite the presence of Au at the interfacial region, an excellent Ohmic contact resistance was obtained. It suggests that the segregation of Au at the semiconductormetal interface does not necessarily have detrimental effects on contact performance.

UR - http://www.scopus.com/inward/record.url?scp=28644446809&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28644446809&partnerID=8YFLogxK

U2 - 10.1063/1.2132089

DO - 10.1063/1.2132089

M3 - Article

AN - SCOPUS:28644446809

VL - 98

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

M1 - 106105

ER -

Characterization of Au and Al segregation layer in post-annealed thin Ti/Al/Mo/Au Ohmic contacts to n-GaN

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this