Characterization of As-grown and ion-implanted GaN by photoluminescence and photoluminescence excitation spectroscopy

S. Kim, S. J. Rhee, D. A. Turnbull, E. E. Reuter, X. Li, J. J. Coleman, S. G. Bishop

Research output: Contribution to journalConference article

Abstract

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy were used to characterize as-grown and ion-implanted epitaxial films of GaN grown on sapphire and SiC substrates by MOCVD, and on sapphire substrates by HVPE. A variety of near-band edge PL bands and deeper PL bands such as the ubiquitous yellow band present at varying strength in most as-grown films of GaN, and several types of deep emission bands by implantation of Er, Cr, and isovalent As and P were studied. PLE spectroscopy of the deep PL bands such as yellow band, the broad implantation-induced defect bands, and the intra-f-shell emission of Er has been used to detect extrinsic absorption bands due to defects and impurities over an extremely broad spectral range.

Original languageEnglish (US)
Pages (from-to)52-53
Number of pages2
JournalLEOS Summer Topical Meeting
StatePublished - Jan 1 1997
EventProceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can
Duration: Aug 11 1997Aug 15 1997

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Photoluminescence
Spectroscopy
photoluminescence
Ions
spectroscopy
excitation
ions
Sapphire
implantation
Defects
sapphire
Epitaxial films
Metallorganic chemical vapor deposition
Substrates
Absorption spectra
defects
Impurities
metalorganic chemical vapor deposition
absorption spectra
impurities

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Kim, S., Rhee, S. J., Turnbull, D. A., Reuter, E. E., Li, X., Coleman, J. J., & Bishop, S. G. (1997). Characterization of As-grown and ion-implanted GaN by photoluminescence and photoluminescence excitation spectroscopy. LEOS Summer Topical Meeting, 52-53.

Characterization of As-grown and ion-implanted GaN by photoluminescence and photoluminescence excitation spectroscopy. / Kim, S.; Rhee, S. J.; Turnbull, D. A.; Reuter, E. E.; Li, X.; Coleman, J. J.; Bishop, S. G.

In: LEOS Summer Topical Meeting, 01.01.1997, p. 52-53.

Research output: Contribution to journalConference article

Kim, S. ; Rhee, S. J. ; Turnbull, D. A. ; Reuter, E. E. ; Li, X. ; Coleman, J. J. ; Bishop, S. G. / Characterization of As-grown and ion-implanted GaN by photoluminescence and photoluminescence excitation spectroscopy. In: LEOS Summer Topical Meeting. 1997 ; pp. 52-53.
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abstract = "Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy were used to characterize as-grown and ion-implanted epitaxial films of GaN grown on sapphire and SiC substrates by MOCVD, and on sapphire substrates by HVPE. A variety of near-band edge PL bands and deeper PL bands such as the ubiquitous yellow band present at varying strength in most as-grown films of GaN, and several types of deep emission bands by implantation of Er, Cr, and isovalent As and P were studied. PLE spectroscopy of the deep PL bands such as yellow band, the broad implantation-induced defect bands, and the intra-f-shell emission of Er has been used to detect extrinsic absorption bands due to defects and impurities over an extremely broad spectral range.",
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AU - Kim, S.

AU - Rhee, S. J.

AU - Turnbull, D. A.

AU - Reuter, E. E.

AU - Li, X.

AU - Coleman, J. J.

AU - Bishop, S. G.

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