Abstract
Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy were used to characterize as-grown and ion-implanted epitaxial films of GaN grown on sapphire and SiC substrates by MOCVD, and on sapphire substrates by HVPE. A variety of near-band edge PL bands and deeper PL bands such as the ubiquitous yellow band present at varying strength in most as-grown films of GaN, and several types of deep emission bands by implantation of Er, Cr, and isovalent As and P were studied. PLE spectroscopy of the deep PL bands such as yellow band, the broad implantation-induced defect bands, and the intra-f-shell emission of Er has been used to detect extrinsic absorption bands due to defects and impurities over an extremely broad spectral range.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 52-53 |
| Number of pages | 2 |
| Journal | LEOS Summer Topical Meeting |
| State | Published - Jan 1 1997 |
| Event | Proceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can Duration: Aug 11 1997 → Aug 15 1997 |
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ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Characterization of As-grown and ion-implanted GaN by photoluminescence and photoluminescence excitation spectroscopy. / Kim, S.; Rhee, S. J.; Turnbull, D. A.; Reuter, E. E.; Li, X.; Coleman, J. J.; Bishop, S. G.
In: LEOS Summer Topical Meeting, 01.01.1997, p. 52-53.Research output: Contribution to journal › Conference article
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TY - JOUR
T1 - Characterization of As-grown and ion-implanted GaN by photoluminescence and photoluminescence excitation spectroscopy
AU - Kim, S.
AU - Rhee, S. J.
AU - Turnbull, D. A.
AU - Reuter, E. E.
AU - Li, X.
AU - Coleman, J. J.
AU - Bishop, S. G.
PY - 1997/1/1
Y1 - 1997/1/1
N2 - Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy were used to characterize as-grown and ion-implanted epitaxial films of GaN grown on sapphire and SiC substrates by MOCVD, and on sapphire substrates by HVPE. A variety of near-band edge PL bands and deeper PL bands such as the ubiquitous yellow band present at varying strength in most as-grown films of GaN, and several types of deep emission bands by implantation of Er, Cr, and isovalent As and P were studied. PLE spectroscopy of the deep PL bands such as yellow band, the broad implantation-induced defect bands, and the intra-f-shell emission of Er has been used to detect extrinsic absorption bands due to defects and impurities over an extremely broad spectral range.
AB - Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy were used to characterize as-grown and ion-implanted epitaxial films of GaN grown on sapphire and SiC substrates by MOCVD, and on sapphire substrates by HVPE. A variety of near-band edge PL bands and deeper PL bands such as the ubiquitous yellow band present at varying strength in most as-grown films of GaN, and several types of deep emission bands by implantation of Er, Cr, and isovalent As and P were studied. PLE spectroscopy of the deep PL bands such as yellow band, the broad implantation-induced defect bands, and the intra-f-shell emission of Er has been used to detect extrinsic absorption bands due to defects and impurities over an extremely broad spectral range.
UR - http://www.scopus.com/inward/record.url?scp=0030674412&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030674412&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0030674412
SP - 52
EP - 53
JO - LEOS Summer Topical Meeting
JF - LEOS Summer Topical Meeting
SN - 1099-4742
ER -