Abstract
Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy were used to characterize as-grown and ion-implanted epitaxial films of GaN grown on sapphire and SiC substrates by MOCVD, and on sapphire substrates by HVPE. A variety of near-band edge PL bands and deeper PL bands such as the ubiquitous yellow band present at varying strength in most as-grown films of GaN, and several types of deep emission bands by implantation of Er, Cr, and isovalent As and P were studied. PLE spectroscopy of the deep PL bands such as yellow band, the broad implantation-induced defect bands, and the intra-f-shell emission of Er has been used to detect extrinsic absorption bands due to defects and impurities over an extremely broad spectral range.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 52-53 |
| Number of pages | 2 |
| Journal | LEOS Summer Topical Meeting |
| State | Published - 1997 |
| Event | Proceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can Duration: Aug 11 1997 → Aug 15 1997 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering