Characterization of As-grown and ion-implanted GaN by photoluminescence and photoluminescence excitation spectroscopy

S. Kim; S. J. Rhee; D. A. Turnbull; E. E. Reuter; X. Li; J. J. Coleman; S. G. Bishop

Characterization of As-grown and ion-implanted GaN by photoluminescence and photoluminescence excitation spectroscopy

S. Kim, S. J. Rhee, D. A. Turnbull, E. E. Reuter, X. Li, J. J. Coleman, S. G. Bishop

Research output: Contribution to journal › Conference article

Abstract

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy were used to characterize as-grown and ion-implanted epitaxial films of GaN grown on sapphire and SiC substrates by MOCVD, and on sapphire substrates by HVPE. A variety of near-band edge PL bands and deeper PL bands such as the ubiquitous yellow band present at varying strength in most as-grown films of GaN, and several types of deep emission bands by implantation of Er, Cr, and isovalent As and P were studied. PLE spectroscopy of the deep PL bands such as yellow band, the broad implantation-induced defect bands, and the intra-f-shell emission of Er has been used to detect extrinsic absorption bands due to defects and impurities over an extremely broad spectral range.

Original language	English (US)
Pages (from-to)	52-53
Number of pages	2
Journal	LEOS Summer Topical Meeting
State	Published - Jan 1 1997
Event	Proceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can Duration: Aug 11 1997 → Aug 15 1997

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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Kim, S., Rhee, S. J., Turnbull, D. A., Reuter, E. E., Li, X., Coleman, J. J., & Bishop, S. G. (1997). Characterization of As-grown and ion-implanted GaN by photoluminescence and photoluminescence excitation spectroscopy. LEOS Summer Topical Meeting, 52-53.

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title = "Characterization of As-grown and ion-implanted GaN by photoluminescence and photoluminescence excitation spectroscopy",

abstract = "Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy were used to characterize as-grown and ion-implanted epitaxial films of GaN grown on sapphire and SiC substrates by MOCVD, and on sapphire substrates by HVPE. A variety of near-band edge PL bands and deeper PL bands such as the ubiquitous yellow band present at varying strength in most as-grown films of GaN, and several types of deep emission bands by implantation of Er, Cr, and isovalent As and P were studied. PLE spectroscopy of the deep PL bands such as yellow band, the broad implantation-induced defect bands, and the intra-f-shell emission of Er has been used to detect extrinsic absorption bands due to defects and impurities over an extremely broad spectral range.",

author = "S. Kim and Rhee, {S. J.} and Turnbull, {D. A.} and Reuter, {E. E.} and X. Li and Coleman, {J. J.} and Bishop, {S. G.}",

year = "1997",

month = jan,

day = "1",

language = "English (US)",

pages = "52--53",

journal = "LEOS Summer Topical Meeting",

issn = "1099-4742",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 LEOS Summer Topical Meeting ; Conference date: 11-08-1997 Through 15-08-1997",

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TY - JOUR

T1 - Characterization of As-grown and ion-implanted GaN by photoluminescence and photoluminescence excitation spectroscopy

AU - Kim, S.

AU - Rhee, S. J.

AU - Turnbull, D. A.

AU - Reuter, E. E.

AU - Li, X.

AU - Coleman, J. J.

AU - Bishop, S. G.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy were used to characterize as-grown and ion-implanted epitaxial films of GaN grown on sapphire and SiC substrates by MOCVD, and on sapphire substrates by HVPE. A variety of near-band edge PL bands and deeper PL bands such as the ubiquitous yellow band present at varying strength in most as-grown films of GaN, and several types of deep emission bands by implantation of Er, Cr, and isovalent As and P were studied. PLE spectroscopy of the deep PL bands such as yellow band, the broad implantation-induced defect bands, and the intra-f-shell emission of Er has been used to detect extrinsic absorption bands due to defects and impurities over an extremely broad spectral range.

AB - Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy were used to characterize as-grown and ion-implanted epitaxial films of GaN grown on sapphire and SiC substrates by MOCVD, and on sapphire substrates by HVPE. A variety of near-band edge PL bands and deeper PL bands such as the ubiquitous yellow band present at varying strength in most as-grown films of GaN, and several types of deep emission bands by implantation of Er, Cr, and isovalent As and P were studied. PLE spectroscopy of the deep PL bands such as yellow band, the broad implantation-induced defect bands, and the intra-f-shell emission of Er has been used to detect extrinsic absorption bands due to defects and impurities over an extremely broad spectral range.

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