Characterization of As-grown and ion-implanted GaN by photoluminescence and photoluminescence excitation spectroscopy

S. Kim, S. J. Rhee, D. A. Turnbull, E. E. Reuter, X. Li, J. J. Coleman, S. G. Bishop

Research output: Contribution to journalConference article

Abstract

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy were used to characterize as-grown and ion-implanted epitaxial films of GaN grown on sapphire and SiC substrates by MOCVD, and on sapphire substrates by HVPE. A variety of near-band edge PL bands and deeper PL bands such as the ubiquitous yellow band present at varying strength in most as-grown films of GaN, and several types of deep emission bands by implantation of Er, Cr, and isovalent As and P were studied. PLE spectroscopy of the deep PL bands such as yellow band, the broad implantation-induced defect bands, and the intra-f-shell emission of Er has been used to detect extrinsic absorption bands due to defects and impurities over an extremely broad spectral range.

Original languageEnglish (US)
Pages (from-to)52-53
Number of pages2
JournalLEOS Summer Topical Meeting
StatePublished - Jan 1 1997
EventProceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can
Duration: Aug 11 1997Aug 15 1997

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Kim, S., Rhee, S. J., Turnbull, D. A., Reuter, E. E., Li, X., Coleman, J. J., & Bishop, S. G. (1997). Characterization of As-grown and ion-implanted GaN by photoluminescence and photoluminescence excitation spectroscopy. LEOS Summer Topical Meeting, 52-53.