TY - JOUR
T1 - Characterization of a Binary Output Resistance-to-Voltage Read Circuit for Sensing Magnetic Tunnel Junctions
AU - Hall, Michael J.
AU - Gruev, Viktor
AU - Chamberlain, Roger D.
N1 - Funding Information:
Manuscript received October 18, 2017; accepted November 25, 2017. Date of publication December 6, 2017; date of current version January 8, 2018. This work was supported in part by AFOSR under Contract FA9550-08-1-0473 and in part by NSF under Grant CNS-0751212. An earlier version of this paper was presented at the IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS 2012), Boise, ID, USA. The associate editor coordinating the review of this paper and approving it for publication was Dr. Pantelis Georgiou. (Corresponding author: Michael J. Hall.) M. J. Hall is with VelociData, Inc., St. Louis, MO 63141 USA, and also with the Department of Computer Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130 USA (e-mail: mhall24@wustl.edu).
Publisher Copyright:
© 2001-2012 IEEE.
PY - 2018/2/1
Y1 - 2018/2/1
N2 - The majority of circuits used to sense magnetic tunnel junction devices are clocked (i.e., a clock signal triggers a read operation). However, there are applications in which a continuous read is the desired functionality. We characterize a binary output resistance-to-voltage read circuit designed to continuously sense the state of a magnetic tunnel junction device. It uses a current conveyor architecture, thereby keeping the voltage across the device stable. This allows for greater resilience to load capacitance (e.g., in the device connections). Empirical results measured from a test chip fabricated in a 3M2P 0.5- μm process are presented, including the demonstration of functional correctness, static properties, and dynamic properties.
AB - The majority of circuits used to sense magnetic tunnel junction devices are clocked (i.e., a clock signal triggers a read operation). However, there are applications in which a continuous read is the desired functionality. We characterize a binary output resistance-to-voltage read circuit designed to continuously sense the state of a magnetic tunnel junction device. It uses a current conveyor architecture, thereby keeping the voltage across the device stable. This allows for greater resilience to load capacitance (e.g., in the device connections). Empirical results measured from a test chip fabricated in a 3M2P 0.5- μm process are presented, including the demonstration of functional correctness, static properties, and dynamic properties.
KW - Magnetic-field sensors
KW - continuous read circuit
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U2 - 10.1109/JSEN.2017.2780112
DO - 10.1109/JSEN.2017.2780112
M3 - Article
AN - SCOPUS:85038362057
SN - 1530-437X
VL - 18
SP - 1023
EP - 1031
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
IS - 3
M1 - 8166749
ER -