Characterization of a Binary Output Resistance-to-Voltage Read Circuit for Sensing Magnetic Tunnel Junctions

Michael J. Hall, Viktor Gruev, Roger D. Chamberlain

Research output: Contribution to journalArticlepeer-review

Abstract

The majority of circuits used to sense magnetic tunnel junction devices are clocked (i.e., a clock signal triggers a read operation). However, there are applications in which a continuous read is the desired functionality. We characterize a binary output resistance-to-voltage read circuit designed to continuously sense the state of a magnetic tunnel junction device. It uses a current conveyor architecture, thereby keeping the voltage across the device stable. This allows for greater resilience to load capacitance (e.g., in the device connections). Empirical results measured from a test chip fabricated in a 3M2P 0.5- μm process are presented, including the demonstration of functional correctness, static properties, and dynamic properties.

Original languageEnglish (US)
Article number8166749
Pages (from-to)1023-1031
Number of pages9
JournalIEEE Sensors Journal
Volume18
Issue number3
DOIs
StatePublished - Feb 1 2018

Keywords

  • Magnetic-field sensors
  • continuous read circuit

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Characterization of a Binary Output Resistance-to-Voltage Read Circuit for Sensing Magnetic Tunnel Junctions'. Together they form a unique fingerprint.

Cite this