Self-aligned quadruple patterning (SAQP) lithography is one of the major techniques for the future process requirement after 16nm/14nm technology node. In this paper, based on the existing knowledge of current 193nm lithography and process flow of SAQP, we will process an early study on the definition of SAQP-friendly layout. With the exploration of the feasible feature regions and possible combinations of adjacent features, we define several simple but important geometry rules to help define the SAQP-friendliness. We also introduce a conflicting graph algorithm to generate the feature region assignment for SAQP decomposition. Our experimental results validate our SAQP-friendly layout definition, and basic circuit building blocks in the low level metal layer are analyzed.