Characterization and decomposition of self-aligned quadruple patterning friendly layout

Hongbo Zhang, Yuelin Du, Martin D F Wong, Rasit O. Topaloglu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Self-aligned quadruple patterning (SAQP) lithography is one of the major techniques for the future process requirement after 16nm/14nm technology node. In this paper, based on the existing knowledge of current 193nm lithography and process flow of SAQP, we will process an early study on the definition of SAQP-friendly layout. With the exploration of the feasible feature regions and possible combinations of adjacent features, we define several simple but important geometry rules to help define the SAQP-friendliness. We also introduce a conflicting graph algorithm to generate the feature region assignment for SAQP decomposition. Our experimental results validate our SAQP-friendly layout definition, and basic circuit building blocks in the low level metal layer are analyzed.

Original languageEnglish (US)
Title of host publicationOptical Microlithography XXV
DOIs
StatePublished - May 31 2012
EventOptical Microlithography XXV - San Jose, CA, United States
Duration: Feb 13 2012Feb 16 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8326
ISSN (Print)0277-786X

Other

OtherOptical Microlithography XXV
CountryUnited States
CitySan Jose, CA
Period2/13/122/16/12

Fingerprint

Quadruple
Patterning
layouts
Lithography
Layout
lithography
Decomposition
decomposition
Decompose
Metals
requirements
Geometry
Networks (circuits)
geometry
metals
Graph Algorithms
Building Blocks
Assignment
Adjacent
Requirements

Keywords

  • Characterization
  • Conflicting Graph
  • Decomposition
  • Feature-Region Assignment
  • SAQP
  • Self-Aligned Quadruple Patterning

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Zhang, H., Du, Y., Wong, M. D. F., & Topaloglu, R. O. (2012). Characterization and decomposition of self-aligned quadruple patterning friendly layout. In Optical Microlithography XXV [83260F] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8326). https://doi.org/10.1117/12.918078

Characterization and decomposition of self-aligned quadruple patterning friendly layout. / Zhang, Hongbo; Du, Yuelin; Wong, Martin D F; Topaloglu, Rasit O.

Optical Microlithography XXV. 2012. 83260F (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8326).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhang, H, Du, Y, Wong, MDF & Topaloglu, RO 2012, Characterization and decomposition of self-aligned quadruple patterning friendly layout. in Optical Microlithography XXV., 83260F, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8326, Optical Microlithography XXV, San Jose, CA, United States, 2/13/12. https://doi.org/10.1117/12.918078
Zhang H, Du Y, Wong MDF, Topaloglu RO. Characterization and decomposition of self-aligned quadruple patterning friendly layout. In Optical Microlithography XXV. 2012. 83260F. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.918078
Zhang, Hongbo ; Du, Yuelin ; Wong, Martin D F ; Topaloglu, Rasit O. / Characterization and decomposition of self-aligned quadruple patterning friendly layout. Optical Microlithography XXV. 2012. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{8ab04aeeeaec4cd987049b7bd0d789f0,
title = "Characterization and decomposition of self-aligned quadruple patterning friendly layout",
abstract = "Self-aligned quadruple patterning (SAQP) lithography is one of the major techniques for the future process requirement after 16nm/14nm technology node. In this paper, based on the existing knowledge of current 193nm lithography and process flow of SAQP, we will process an early study on the definition of SAQP-friendly layout. With the exploration of the feasible feature regions and possible combinations of adjacent features, we define several simple but important geometry rules to help define the SAQP-friendliness. We also introduce a conflicting graph algorithm to generate the feature region assignment for SAQP decomposition. Our experimental results validate our SAQP-friendly layout definition, and basic circuit building blocks in the low level metal layer are analyzed.",
keywords = "Characterization, Conflicting Graph, Decomposition, Feature-Region Assignment, SAQP, Self-Aligned Quadruple Patterning",
author = "Hongbo Zhang and Yuelin Du and Wong, {Martin D F} and Topaloglu, {Rasit O.}",
year = "2012",
month = "5",
day = "31",
doi = "10.1117/12.918078",
language = "English (US)",
isbn = "9780819489821",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Optical Microlithography XXV",

}

TY - GEN

T1 - Characterization and decomposition of self-aligned quadruple patterning friendly layout

AU - Zhang, Hongbo

AU - Du, Yuelin

AU - Wong, Martin D F

AU - Topaloglu, Rasit O.

PY - 2012/5/31

Y1 - 2012/5/31

N2 - Self-aligned quadruple patterning (SAQP) lithography is one of the major techniques for the future process requirement after 16nm/14nm technology node. In this paper, based on the existing knowledge of current 193nm lithography and process flow of SAQP, we will process an early study on the definition of SAQP-friendly layout. With the exploration of the feasible feature regions and possible combinations of adjacent features, we define several simple but important geometry rules to help define the SAQP-friendliness. We also introduce a conflicting graph algorithm to generate the feature region assignment for SAQP decomposition. Our experimental results validate our SAQP-friendly layout definition, and basic circuit building blocks in the low level metal layer are analyzed.

AB - Self-aligned quadruple patterning (SAQP) lithography is one of the major techniques for the future process requirement after 16nm/14nm technology node. In this paper, based on the existing knowledge of current 193nm lithography and process flow of SAQP, we will process an early study on the definition of SAQP-friendly layout. With the exploration of the feasible feature regions and possible combinations of adjacent features, we define several simple but important geometry rules to help define the SAQP-friendliness. We also introduce a conflicting graph algorithm to generate the feature region assignment for SAQP decomposition. Our experimental results validate our SAQP-friendly layout definition, and basic circuit building blocks in the low level metal layer are analyzed.

KW - Characterization

KW - Conflicting Graph

KW - Decomposition

KW - Feature-Region Assignment

KW - SAQP

KW - Self-Aligned Quadruple Patterning

UR - http://www.scopus.com/inward/record.url?scp=84861496214&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861496214&partnerID=8YFLogxK

U2 - 10.1117/12.918078

DO - 10.1117/12.918078

M3 - Conference contribution

AN - SCOPUS:84861496214

SN - 9780819489821

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Optical Microlithography XXV

ER -