Characteristics of Ti/Pt/Au ohmic contacts on p-type GaN/Al xGa1-xN superlattices

L. Zhou; F. Khan; A. T. Ping; A. Osinski; I. Adesida

doi:10.1557/s1092578300004713

Characteristics of Ti/Pt/Au ohmic contacts on p-type GaN/Al _xGa_1-xN superlattices

L. Zhou, F. Khan, A. T. Ping, A. Osinski, I. Adesida

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Abstract

Ti/Pt/Au metallization on p-type GaN/Al_xGa_1-xN (x=0.10 and 0.20) superlattices (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an effective ohmic metallization scheme on p-type GaN/Al _xGa_1-xN superlattices. A specific contact resistance of R_c = 4.6×10^-4 Ω-cm² is achieved for unalloyed Ti/Pt/Au on GaN/Al_0.2Ga_0.8N SL. This is reduced to 1.3×10^-4 Ω-cm² after annealing for 5 minutes at 300 °C.

Original language	English (US)
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	5
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1557/s1092578300004713
State	Published - 2000

ASJC Scopus subject areas

Materials Science(all)

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@article{887fbd3c414b41b7a5d1be56f8acd706,

title = "Characteristics of Ti/Pt/Au ohmic contacts on p-type GaN/Al xGa1-xN superlattices",

abstract = "Ti/Pt/Au metallization on p-type GaN/AlxGa1-xN (x=0.10 and 0.20) superlattices (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an effective ohmic metallization scheme on p-type GaN/Al xGa1-xN superlattices. A specific contact resistance of Rc = 4.6×10-4 Ω-cm2 is achieved for unalloyed Ti/Pt/Au on GaN/Al0.2Ga0.8N SL. This is reduced to 1.3×10-4 Ω-cm2 after annealing for 5 minutes at 300 °C.",

author = "L. Zhou and F. Khan and Ping, {A. T.} and A. Osinski and I. Adesida",

year = "2000",

doi = "10.1557/s1092578300004713",

language = "English (US)",

volume = "5",

journal = "MRS Internet Journal of Nitride Semiconductor Research",

issn = "1092-5783",

publisher = "Materials Research Society",

number = "SUPPL. 1",

}

TY - JOUR

T1 - Characteristics of Ti/Pt/Au ohmic contacts on p-type GaN/Al xGa1-xN superlattices

AU - Zhou, L.

AU - Khan, F.

AU - Ping, A. T.

AU - Osinski, A.

AU - Adesida, I.

PY - 2000

Y1 - 2000

N2 - Ti/Pt/Au metallization on p-type GaN/AlxGa1-xN (x=0.10 and 0.20) superlattices (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an effective ohmic metallization scheme on p-type GaN/Al xGa1-xN superlattices. A specific contact resistance of Rc = 4.6×10-4 Ω-cm2 is achieved for unalloyed Ti/Pt/Au on GaN/Al0.2Ga0.8N SL. This is reduced to 1.3×10-4 Ω-cm2 after annealing for 5 minutes at 300 °C.

AB - Ti/Pt/Au metallization on p-type GaN/AlxGa1-xN (x=0.10 and 0.20) superlattices (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an effective ohmic metallization scheme on p-type GaN/Al xGa1-xN superlattices. A specific contact resistance of Rc = 4.6×10-4 Ω-cm2 is achieved for unalloyed Ti/Pt/Au on GaN/Al0.2Ga0.8N SL. This is reduced to 1.3×10-4 Ω-cm2 after annealing for 5 minutes at 300 °C.

UR - http://www.scopus.com/inward/record.url?scp=3242777750&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3242777750&partnerID=8YFLogxK

U2 - 10.1557/s1092578300004713

DO - 10.1557/s1092578300004713

M3 - Article

AN - SCOPUS:3242777750

VL - 5

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

SN - 1092-5783

IS - SUPPL. 1

ER -