Characteristics of strain-induced in xGa 1-xas nanowires grown on Si(111) substrates

Jae Cheol Shin, Kyoung Jin Choi, Do Yang Kim, Won Jun Choi, Xiuling Li

Research output: Contribution to journalArticle

Abstract

Large strain-energy arising from lattice mismatch allows one-dimensional heteroepitaxial growth of In xGa 1-xAs on silicon substrates without any catalyst or pattern assistance. In this paper, we show that in contrast to nanowires (NWs) grown by metal-catalyzed vapor-liquid-solid mechanism, strain-induced In xGa 1-xAs NWs have several unique morphological features including no tapering, slight bending, and composition-dependent NW height saturation. Although small fluctuation exists, no systematic composition variations are observed over the entire In xGa 1-xAs NW length within the resolution of the energy-dispersive X-ray spectroscopy analysis.

Original languageEnglish (US)
Pages (from-to)2994-2998
Number of pages5
JournalCrystal Growth and Design
Volume12
Issue number6
DOIs
StatePublished - Jun 6 2012

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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