Abstract
Large strain-energy arising from lattice mismatch allows one-dimensional heteroepitaxial growth of In xGa 1-xAs on silicon substrates without any catalyst or pattern assistance. In this paper, we show that in contrast to nanowires (NWs) grown by metal-catalyzed vapor-liquid-solid mechanism, strain-induced In xGa 1-xAs NWs have several unique morphological features including no tapering, slight bending, and composition-dependent NW height saturation. Although small fluctuation exists, no systematic composition variations are observed over the entire In xGa 1-xAs NW length within the resolution of the energy-dispersive X-ray spectroscopy analysis.
Original language | English (US) |
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Pages (from-to) | 2994-2998 |
Number of pages | 5 |
Journal | Crystal Growth and Design |
Volume | 12 |
Issue number | 6 |
DOIs | |
State | Published - Jun 6 2012 |
ASJC Scopus subject areas
- General Chemistry
- General Materials Science
- Condensed Matter Physics