Characteristics of strain-induced in xGa 1-xas nanowires grown on Si(111) substrates

Jae Cheol Shin, Kyoung Jin Choi, Do Yang Kim, Won Jun Choi, Xiuling Li

Research output: Contribution to journalArticle

Abstract

Large strain-energy arising from lattice mismatch allows one-dimensional heteroepitaxial growth of In xGa 1-xAs on silicon substrates without any catalyst or pattern assistance. In this paper, we show that in contrast to nanowires (NWs) grown by metal-catalyzed vapor-liquid-solid mechanism, strain-induced In xGa 1-xAs NWs have several unique morphological features including no tapering, slight bending, and composition-dependent NW height saturation. Although small fluctuation exists, no systematic composition variations are observed over the entire In xGa 1-xAs NW length within the resolution of the energy-dispersive X-ray spectroscopy analysis.

Original languageEnglish (US)
Pages (from-to)2994-2998
Number of pages5
JournalCrystal Growth and Design
Volume12
Issue number6
DOIs
StatePublished - Jun 6 2012

Fingerprint

Nanowires
nanowires
Substrates
Lattice mismatch
metal vapors
Silicon
tapering
Strain energy
Chemical analysis
Epitaxial growth
Metals
Vapors
saturation
catalysts
Catalysts
energy
Liquids
silicon
liquids
spectroscopy

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Characteristics of strain-induced in xGa 1-xas nanowires grown on Si(111) substrates. / Shin, Jae Cheol; Choi, Kyoung Jin; Kim, Do Yang; Choi, Won Jun; Li, Xiuling.

In: Crystal Growth and Design, Vol. 12, No. 6, 06.06.2012, p. 2994-2998.

Research output: Contribution to journalArticle

Shin, Jae Cheol ; Choi, Kyoung Jin ; Kim, Do Yang ; Choi, Won Jun ; Li, Xiuling. / Characteristics of strain-induced in xGa 1-xas nanowires grown on Si(111) substrates. In: Crystal Growth and Design. 2012 ; Vol. 12, No. 6. pp. 2994-2998.
@article{ce21cd7cee194b36b7c51e8e9fa86be4,
title = "Characteristics of strain-induced in xGa 1-xas nanowires grown on Si(111) substrates",
abstract = "Large strain-energy arising from lattice mismatch allows one-dimensional heteroepitaxial growth of In xGa 1-xAs on silicon substrates without any catalyst or pattern assistance. In this paper, we show that in contrast to nanowires (NWs) grown by metal-catalyzed vapor-liquid-solid mechanism, strain-induced In xGa 1-xAs NWs have several unique morphological features including no tapering, slight bending, and composition-dependent NW height saturation. Although small fluctuation exists, no systematic composition variations are observed over the entire In xGa 1-xAs NW length within the resolution of the energy-dispersive X-ray spectroscopy analysis.",
author = "Shin, {Jae Cheol} and Choi, {Kyoung Jin} and Kim, {Do Yang} and Choi, {Won Jun} and Xiuling Li",
year = "2012",
month = "6",
day = "6",
doi = "10.1021/cg300210h",
language = "English (US)",
volume = "12",
pages = "2994--2998",
journal = "Crystal Growth and Design",
issn = "1528-7483",
publisher = "American Chemical Society",
number = "6",

}

TY - JOUR

T1 - Characteristics of strain-induced in xGa 1-xas nanowires grown on Si(111) substrates

AU - Shin, Jae Cheol

AU - Choi, Kyoung Jin

AU - Kim, Do Yang

AU - Choi, Won Jun

AU - Li, Xiuling

PY - 2012/6/6

Y1 - 2012/6/6

N2 - Large strain-energy arising from lattice mismatch allows one-dimensional heteroepitaxial growth of In xGa 1-xAs on silicon substrates without any catalyst or pattern assistance. In this paper, we show that in contrast to nanowires (NWs) grown by metal-catalyzed vapor-liquid-solid mechanism, strain-induced In xGa 1-xAs NWs have several unique morphological features including no tapering, slight bending, and composition-dependent NW height saturation. Although small fluctuation exists, no systematic composition variations are observed over the entire In xGa 1-xAs NW length within the resolution of the energy-dispersive X-ray spectroscopy analysis.

AB - Large strain-energy arising from lattice mismatch allows one-dimensional heteroepitaxial growth of In xGa 1-xAs on silicon substrates without any catalyst or pattern assistance. In this paper, we show that in contrast to nanowires (NWs) grown by metal-catalyzed vapor-liquid-solid mechanism, strain-induced In xGa 1-xAs NWs have several unique morphological features including no tapering, slight bending, and composition-dependent NW height saturation. Although small fluctuation exists, no systematic composition variations are observed over the entire In xGa 1-xAs NW length within the resolution of the energy-dispersive X-ray spectroscopy analysis.

UR - http://www.scopus.com/inward/record.url?scp=84861919474&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861919474&partnerID=8YFLogxK

U2 - 10.1021/cg300210h

DO - 10.1021/cg300210h

M3 - Article

AN - SCOPUS:84861919474

VL - 12

SP - 2994

EP - 2998

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 6

ER -