Characteristics of microdischarge devices in silicon

J. W. Frame, P. C. John, B. Bozeman, D. J. Wheeler, J. G. Eden, T. A. DeTemple

Research output: Contribution to journalConference article

Abstract

A simpler discharge geometry that is more amenable to mass production are presented. The microdischarge devices have been developed in which the fabrication scheme has been simplified and based entirely on thin film technology. These devices were constructed by depositing a 20 μm oxide layer on a silicon wafer. A nickel or chrome electrode is then deposited on top of the oxide layer. The cavity is defined through photolithography and formed through etching. These devices have operated with cavity diameters below 200 μm. The characteristics of these devices and their potential for applications in displays and lighting are discussed.

Original languageEnglish (US)
Number of pages1
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
StatePublished - Dec 1 1998
EventProceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) - Orlando, FL, USA
Duration: Dec 1 1998Dec 4 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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