Abstract
A simpler discharge geometry that is more amenable to mass production are presented. The microdischarge devices have been developed in which the fabrication scheme has been simplified and based entirely on thin film technology. These devices were constructed by depositing a 20 μm oxide layer on a silicon wafer. A nickel or chrome electrode is then deposited on top of the oxide layer. The cavity is defined through photolithography and formed through etching. These devices have operated with cavity diameters below 200 μm. The characteristics of these devices and their potential for applications in displays and lighting are discussed.
| Original language | English (US) |
|---|---|
| Number of pages | 1 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 1 |
| State | Published - Dec 1 1998 |
| Event | Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) - Orlando, FL, USA Duration: Dec 1 1998 → Dec 4 1998 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Fingerprint Dive into the research topics of 'Characteristics of microdischarge devices in silicon'. Together they form a unique fingerprint.
Cite this
Frame, J. W., John, P. C., Bozeman, B., Wheeler, D. J., Eden, J. G., & DeTemple, T. A. (1998). Characteristics of microdischarge devices in silicon. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 1.