Characteristics of microdischarge devices in silicon

J. W. Frame; P. C. John; B. Bozeman; D. J. Wheeler; J. G. Eden; T. A. DeTemple

Characteristics of microdischarge devices in silicon

J. W. Frame, P. C. John, B. Bozeman, D. J. Wheeler, J. G. Eden, T. A. DeTemple

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

A simpler discharge geometry that is more amenable to mass production are presented. The microdischarge devices have been developed in which the fabrication scheme has been simplified and based entirely on thin film technology. These devices were constructed by depositing a 20 μm oxide layer on a silicon wafer. A nickel or chrome electrode is then deposited on top of the oxide layer. The cavity is defined through photolithography and formed through etching. These devices have operated with cavity diameters below 200 μm. The characteristics of these devices and their potential for applications in displays and lighting are discussed.

Original language	English (US)
Number of pages	1
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1
State	Published - Dec 1 1998
Event	Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) - Orlando, FL, USA Duration: Dec 1 1998 → Dec 4 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Characteristics of microdischarge devices in silicon",

abstract = "A simpler discharge geometry that is more amenable to mass production are presented. The microdischarge devices have been developed in which the fabrication scheme has been simplified and based entirely on thin film technology. These devices were constructed by depositing a 20 μm oxide layer on a silicon wafer. A nickel or chrome electrode is then deposited on top of the oxide layer. The cavity is defined through photolithography and formed through etching. These devices have operated with cavity diameters below 200 μm. The characteristics of these devices and their potential for applications in displays and lighting are discussed.",

author = "Frame, {J. W.} and John, {P. C.} and B. Bozeman and Wheeler, {D. J.} and Eden, {J. G.} and DeTemple, {T. A.}",

year = "1998",

month = dec,

day = "1",

language = "English (US)",

volume = "1",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) ; Conference date: 01-12-1998 Through 04-12-1998",

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TY - JOUR

T1 - Characteristics of microdischarge devices in silicon

AU - Frame, J. W.

AU - John, P. C.

AU - Bozeman, B.

AU - Wheeler, D. J.

AU - Eden, J. G.

AU - DeTemple, T. A.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - A simpler discharge geometry that is more amenable to mass production are presented. The microdischarge devices have been developed in which the fabrication scheme has been simplified and based entirely on thin film technology. These devices were constructed by depositing a 20 μm oxide layer on a silicon wafer. A nickel or chrome electrode is then deposited on top of the oxide layer. The cavity is defined through photolithography and formed through etching. These devices have operated with cavity diameters below 200 μm. The characteristics of these devices and their potential for applications in displays and lighting are discussed.

AB - A simpler discharge geometry that is more amenable to mass production are presented. The microdischarge devices have been developed in which the fabrication scheme has been simplified and based entirely on thin film technology. These devices were constructed by depositing a 20 μm oxide layer on a silicon wafer. A nickel or chrome electrode is then deposited on top of the oxide layer. The cavity is defined through photolithography and formed through etching. These devices have operated with cavity diameters below 200 μm. The characteristics of these devices and their potential for applications in displays and lighting are discussed.

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M3 - Conference article

AN - SCOPUS:0032287860

VL - 1

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

SN - 1092-8081

T2 - Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2)

Y2 - 1 December 1998 through 4 December 1998

ER -