Characterisation of Pd Schottky barrier on n-type GaN

A. T. Ping; A. C. Schmitz; M. Asif Khan; I. Adesida

doi:10.1049/el:19960029

Characterisation of Pd Schottky barrier on n-type GaN

A. T. Ping
, A. C. Schmitz
, M. Asif Khan
, I. Adesida

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The electrical characteristics of Pd Schottky barrier to n-type GaN grown by MOCVD were investigated. The effective barrier height was found to be 0.94 and 1.07eV from I-V and C-V measurements, respectively. The ideality factor was approx.1.04. The effective Richardson constant was determined to be approx.3.24Acm-²K^-2 using the modified Norde plot. These values were also compared to Au Schottky contacts.

Original language	English (US)
Pages (from-to)	68-70
Number of pages	3
Journal	Electronics Letters
Volume	32
Issue number	1
DOIs	https://doi.org/10.1049/el:19960029
State	Published - Jan 4 1996

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Electrical and Electronic Engineering

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10.1049/el:19960029

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AU - Schmitz, A. C.

AU - Asif Khan, M.

AU - Adesida, I.

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Y1 - 1996/1/4

N2 - The electrical characteristics of Pd Schottky barrier to n-type GaN grown by MOCVD were investigated. The effective barrier height was found to be 0.94 and 1.07eV from I-V and C-V measurements, respectively. The ideality factor was approx.1.04. The effective Richardson constant was determined to be approx.3.24Acm-2K-2 using the modified Norde plot. These values were also compared to Au Schottky contacts.

AB - The electrical characteristics of Pd Schottky barrier to n-type GaN grown by MOCVD were investigated. The effective barrier height was found to be 0.94 and 1.07eV from I-V and C-V measurements, respectively. The ideality factor was approx.1.04. The effective Richardson constant was determined to be approx.3.24Acm-2K-2 using the modified Norde plot. These values were also compared to Au Schottky contacts.

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Characterisation of Pd Schottky barrier on n-type GaN

Abstract

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