Characterisation of Pd Schottky barrier on n-type GaN

A. T. Ping, A. C. Schmitz, M. Asif Khan, I. Adesida

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The electrical characteristics of Pd Schottky barrier to n-type GaN grown by MOCVD were investigated. The effective barrier height was found to be 0.94 and 1.07eV from I-V and C-V measurements, respectively. The ideality factor was approx.1.04. The effective Richardson constant was determined to be approx.3.24Acm-2K-2 using the modified Norde plot. These values were also compared to Au Schottky contacts.

Original languageEnglish (US)
Pages (from-to)68-70
Number of pages3
JournalElectronics Letters
Issue number1
StatePublished - Jan 4 1996
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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