Characterisation of iridium Schottky contacts on n-AlxGa1-xN

V. Kumar; D. Selvanathan; A. Kuliev; S. Kim; J. Flynn; I. Adesida

doi:10.1049/el:20030460

Characterisation of iridium Schottky contacts on n-Al_xGa_1-xN

V. Kumar, D. Selvanathan, A. Kuliev, S. Kim, J. Flynn, I. Adesida

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Abstract

The electrical characteristics of Ir Schottky contacts on n-type Al_xGa_1-xN (x = 0, 0.10, 0.20, 0.25) grown by MOCVD on sapphire substrate are investigated. The barrier heights are obtained from current-voltage (I-V) and capacitance-voltage (C-V) measurements and are found to increase with aluminium composition. The effect of thermal annealing on barrier height of Ir Schottky diodes on Al_0.25Ga_0.75N is also studied. Only slight degradation in Schottky barrier height is observed after annealing the Ir-Schottky diodes at 850°C for 30 s.

Original language	English (US)
Pages (from-to)	747-748
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	9
DOIs	https://doi.org/10.1049/el:20030460
State	Published - May 1 2003

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20030460

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title = "Characterisation of iridium Schottky contacts on n-AlxGa1-xN",

abstract = "The electrical characteristics of Ir Schottky contacts on n-type AlxGa1-xN (x = 0, 0.10, 0.20, 0.25) grown by MOCVD on sapphire substrate are investigated. The barrier heights are obtained from current-voltage (I-V) and capacitance-voltage (C-V) measurements and are found to increase with aluminium composition. The effect of thermal annealing on barrier height of Ir Schottky diodes on Al0.25Ga0.75N is also studied. Only slight degradation in Schottky barrier height is observed after annealing the Ir-Schottky diodes at 850°C for 30 s.",

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AU - Kumar, V.

AU - Selvanathan, D.

AU - Kuliev, A.

AU - Kim, S.

AU - Flynn, J.

AU - Adesida, I.

PY - 2003/5/1

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N2 - The electrical characteristics of Ir Schottky contacts on n-type AlxGa1-xN (x = 0, 0.10, 0.20, 0.25) grown by MOCVD on sapphire substrate are investigated. The barrier heights are obtained from current-voltage (I-V) and capacitance-voltage (C-V) measurements and are found to increase with aluminium composition. The effect of thermal annealing on barrier height of Ir Schottky diodes on Al0.25Ga0.75N is also studied. Only slight degradation in Schottky barrier height is observed after annealing the Ir-Schottky diodes at 850°C for 30 s.

AB - The electrical characteristics of Ir Schottky contacts on n-type AlxGa1-xN (x = 0, 0.10, 0.20, 0.25) grown by MOCVD on sapphire substrate are investigated. The barrier heights are obtained from current-voltage (I-V) and capacitance-voltage (C-V) measurements and are found to increase with aluminium composition. The effect of thermal annealing on barrier height of Ir Schottky diodes on Al0.25Ga0.75N is also studied. Only slight degradation in Schottky barrier height is observed after annealing the Ir-Schottky diodes at 850°C for 30 s.

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