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Channel engineering of SiGe-based heterostructures for high mobility MOSFETs
Christopher W. Leitz
, Matthew T. Currie
,
Minjoo L. Lee
, Zhi Yuan Cheng
, Dimitri A. Antoniadis
, Eugene A. Fitzgerald
Research output
:
Contribution to journal
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Conference article
›
peer-review
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Keyphrases
MOSFET
100%
Heterostructure
100%
SiGe
100%
Hole Mobility
100%
Alloy Scattering
100%
Channel Engineering
100%
High Mobility
100%
Long Channel
50%
Si Surface
50%
Surface Channel
50%
Electron Mobility
50%
Mobility Enhancement
50%
Channel Mobility
50%
Strained Si
50%
Buried Channel
50%
Virtual Substrate
50%
Engineering
Engineering
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Heterostructures
100%
Alloy
100%
Heterojunctions
50%
Mobility Enhancement
50%
Si Surface
50%
Material Science
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Heterojunction
100%
Alloy
100%
Hole Mobility
100%
Electron Mobility
50%