Channel engineering of SiGe-based heterostructures for high mobility MOSFETs

Christopher W. Leitz, Matthew T. Currie, Minjoo L. Lee, Zhi Yuan Cheng, Dimitri A. Antoniadis, Eugene A. Fitzgerald

Research output: Contribution to journalConference articlepeer-review

Abstract

The effects of alloy scattering on channel mobility in long channel MOSFETs were studied. A combination of a buried Si0.2Ge0.8 channel and a strained Si surface channel grown on a relaxed Si0.5Ge0.5 virtual substrate was used to achieve nearly symmetric electron and hole mobility in the same heterostructure. Significant hole mobility enhancement was achieved for buried channel compositions where alloy scattering was expected to be the most severe.

Original languageEnglish (US)
Pages (from-to)113-118
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume686
StatePublished - Jan 1 2002
Externally publishedYes
EventMaterials Issues in Novel Si-Based Technology - Boston, MA, United States
Duration: Nov 26 2001Nov 28 2001

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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