Channel engineering of SiGe-based heterostructures for high mobility MOSFETs

Christopher W. Leitz; Matthew T. Currie; Minjoo L. Lee; Zhi Yuan Cheng; Dimitri A. Antoniadis; Eugene A. Fitzgerald

Channel engineering of SiGe-based heterostructures for high mobility MOSFETs

Christopher W. Leitz, Matthew T. Currie, Minjoo L. Lee, Zhi Yuan Cheng, Dimitri A. Antoniadis, Eugene A. Fitzgerald

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effects of alloy scattering on channel mobility in long channel MOSFETs were studied. A combination of a buried Si_0.2Ge_0.8 channel and a strained Si surface channel grown on a relaxed Si_0.5Ge_0.5 virtual substrate was used to achieve nearly symmetric electron and hole mobility in the same heterostructure. Significant hole mobility enhancement was achieved for buried channel compositions where alloy scattering was expected to be the most severe.

Original language	English (US)
Pages (from-to)	113-118
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	686
State	Published - 2002
Externally published	Yes
Event	Materials Issues in Novel Si-Based Technology - Boston, MA, United States Duration: Nov 26 2001 → Nov 28 2001

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Channel engineering of SiGe-based heterostructures for high mobility MOSFETs",

abstract = "The effects of alloy scattering on channel mobility in long channel MOSFETs were studied. A combination of a buried Si0.2Ge0.8 channel and a strained Si surface channel grown on a relaxed Si0.5Ge0.5 virtual substrate was used to achieve nearly symmetric electron and hole mobility in the same heterostructure. Significant hole mobility enhancement was achieved for buried channel compositions where alloy scattering was expected to be the most severe.",

author = "Leitz, {Christopher W.} and Currie, {Matthew T.} and Lee, {Minjoo L.} and Cheng, {Zhi Yuan} and Antoniadis, {Dimitri A.} and Fitzgerald, {Eugene A.}",

year = "2002",

language = "English (US)",

volume = "686",

pages = "113--118",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Materials Issues in Novel Si-Based Technology ; Conference date: 26-11-2001 Through 28-11-2001",

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TY - JOUR

T1 - Channel engineering of SiGe-based heterostructures for high mobility MOSFETs

AU - Leitz, Christopher W.

AU - Currie, Matthew T.

AU - Lee, Minjoo L.

AU - Cheng, Zhi Yuan

AU - Antoniadis, Dimitri A.

AU - Fitzgerald, Eugene A.

PY - 2002

Y1 - 2002

N2 - The effects of alloy scattering on channel mobility in long channel MOSFETs were studied. A combination of a buried Si0.2Ge0.8 channel and a strained Si surface channel grown on a relaxed Si0.5Ge0.5 virtual substrate was used to achieve nearly symmetric electron and hole mobility in the same heterostructure. Significant hole mobility enhancement was achieved for buried channel compositions where alloy scattering was expected to be the most severe.

AB - The effects of alloy scattering on channel mobility in long channel MOSFETs were studied. A combination of a buried Si0.2Ge0.8 channel and a strained Si surface channel grown on a relaxed Si0.5Ge0.5 virtual substrate was used to achieve nearly symmetric electron and hole mobility in the same heterostructure. Significant hole mobility enhancement was achieved for buried channel compositions where alloy scattering was expected to be the most severe.

UR - http://www.scopus.com/inward/record.url?scp=0036346910&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036346910&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036346910

SN - 0272-9172

VL - 686

SP - 113

EP - 118

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Materials Issues in Novel Si-Based Technology

Y2 - 26 November 2001 through 28 November 2001

ER -

Channel engineering of SiGe-based heterostructures for high mobility MOSFETs

Abstract

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