Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112)

Minjoo L. Lee, Dimitri A. Antoniadis, Eugene A. Fitzgerald

Research output: Contribution to journalArticlepeer-review

Abstract

The growth of SiGe on surfaces other than Si(001) is of interest in VLSI technology both for realizing novel, high-mobility channels and for use in epitaxial source/drains. In this paper we report that thick, low-mismatch SiGe films grown on Si(111), (110), and (112) possess threading dislocation densities (TDD) > 10 × higher than comparable films on (001). We further show that one of the primary factors limiting crystalline quality on Si(111), (110), and (112) is the tendency towards stacking fault and microtwin formation which result from the nucleation and glide of dissociated Shockley partial dislocations. These microtwins are believed to arrest the propagation of strain-relieving misfit dislocations, necessitating further nucleation events and an overall rise in TDD. Therefore, while low-TDD SiGe buffers on Si (001) can typically be graded at 10-20% Ge/μm, it appears that attainment of similar TDDs on (111), (110), or (112) may require substantially lower grading rates and correspondingly thicker films.

Original languageEnglish (US)
Pages (from-to)136-139
Number of pages4
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
StatePublished - Jun 5 2006
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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