Chalcopyrite semiconductors for quantum well solar cells

Maziar Afshar, Sascha Sadewasser, Jürgen Albert, Sebastian Lehmann, Daniel Abou-Ras, David Fuertes Marrón, Angus A. Rockett, Esa Räsänen, Martha Ch Lux-Steiner

Research output: Contribution to journalArticlepeer-review

Abstract

The possibilities of using highly absorbing chalcopyrite semiconductors of the type Cu(In,Ga)Se 2 in a quantum well solar cell structure are explored. Thin alternating layers of 50 nm CuInSe 2 and CuGaSe 2 were grown epitaxially on a GaAs(100) substrate. The optical properties of a resulting structure of three layers indicate charge carrier confinement in the low band gap CuInSe 2 layer. By compositional analysis interdiffusion of In and Ga at the interfaces was found. The compositional profile was converted into a conduction-band diagram, for which the quantization of energy levels was numerically confirmedusing the effective-mass approximation. The results provide a promising basis for the future development of chalcopyrite-type quantum well structures and their application, i.e. in quantum well solar cells.

Original languageEnglish (US)
Pages (from-to)1109-1115
Number of pages7
JournalAdvanced Energy Materials
Volume1
Issue number6
DOIs
StatePublished - Nov 2011
Externally publishedYes

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • General Materials Science

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