Chalcogenide phase change induced with single-wall carbon nanotube heaters

Albert Liao, Feng Xiong, Kristof Darmawikarta, John R Abelson, Eric Pop

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Phase-change memory (PCM) is a promising candidate for non-volatile data storage [1]. PCM works by switching a phase-change material (chalcogenide) between its amorphous and crystalline states through Joule heating. The resistivity change is more than 100x, thus stored information can be easily retrieved. An attractive feature of PCM is its potential to scale below 32 nm Flash, yet it is unclear how such memory would be addressed or heated in such highly localized fashion. In this study, we demonstrate a key step in this area, by inducing ultra-narrow (5-10 nm) phase-change regions with individual single-wall carbon nanotube (SWNTs) heaters, and programming currents of the order 10μ.

Original languageEnglish (US)
Title of host publication67th Device Research Conference, DRC 2009
Number of pages2
StatePublished - Dec 11 2009
Event67th Device Research Conference, DRC 2009 - University Park, PA, United States
Duration: Jun 22 2009Jun 24 2009

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other67th Device Research Conference, DRC 2009
Country/TerritoryUnited States
CityUniversity Park, PA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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