TY - GEN
T1 - Chalcogenide phase change induced with single-wall carbon nanotube heaters
AU - Liao, Albert
AU - Xiong, Feng
AU - Darmawikarta, Kristof
AU - Abelson, John R
AU - Pop, Eric
PY - 2009/12/11
Y1 - 2009/12/11
N2 - Phase-change memory (PCM) is a promising candidate for non-volatile data storage [1]. PCM works by switching a phase-change material (chalcogenide) between its amorphous and crystalline states through Joule heating. The resistivity change is more than 100x, thus stored information can be easily retrieved. An attractive feature of PCM is its potential to scale below 32 nm Flash, yet it is unclear how such memory would be addressed or heated in such highly localized fashion. In this study, we demonstrate a key step in this area, by inducing ultra-narrow (5-10 nm) phase-change regions with individual single-wall carbon nanotube (SWNTs) heaters, and programming currents of the order 10μ.
AB - Phase-change memory (PCM) is a promising candidate for non-volatile data storage [1]. PCM works by switching a phase-change material (chalcogenide) between its amorphous and crystalline states through Joule heating. The resistivity change is more than 100x, thus stored information can be easily retrieved. An attractive feature of PCM is its potential to scale below 32 nm Flash, yet it is unclear how such memory would be addressed or heated in such highly localized fashion. In this study, we demonstrate a key step in this area, by inducing ultra-narrow (5-10 nm) phase-change regions with individual single-wall carbon nanotube (SWNTs) heaters, and programming currents of the order 10μ.
UR - http://www.scopus.com/inward/record.url?scp=76549088805&partnerID=8YFLogxK
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U2 - 10.1109/DRC.2009.5354846
DO - 10.1109/DRC.2009.5354846
M3 - Conference contribution
AN - SCOPUS:76549088805
SN - 9781424435289
T3 - Device Research Conference - Conference Digest, DRC
SP - 239
EP - 240
BT - 67th Device Research Conference, DRC 2009
T2 - 67th Device Research Conference, DRC 2009
Y2 - 22 June 2009 through 24 June 2009
ER -