Cd doping at the CuinSe2/CdS heterojunction

Dongxiang Liao, Angus Rockett

Research output: Contribution to journalArticlepeer-review


The chemical composition of cadmium doped CuInSe2/CdS (CIS) based heterojunctions, in conjunction with selective etching of CdS, was investigated using x-ray photoelectron (XPS), Auger electron, and secondary ion mass spectroscopy (SIMS). The process involved the incorporation of Cd monolayers in the first 1-3 atomic layers of CIS, accompanied with significant Cu depletion with respect to In in the same region. The result was the large band bending on the CIS side of the heterojunction.

Original languageEnglish (US)
Pages (from-to)9380-9382
Number of pages3
JournalJournal of Applied Physics
Issue number11
StatePublished - Jun 1 2003
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'Cd doping at the CuinSe2/CdS heterojunction'. Together they form a unique fingerprint.

Cite this