Cd doping at the CuinSe2/CdS heterojunction

Dongxiang Liao; Angus Rockett

doi:10.1063/1.1570500

Cd doping at the CuinSe₂/CdS heterojunction

Dongxiang Liao, Angus Rockett

Research output: Contribution to journal › Article › peer-review

Abstract

The chemical composition of cadmium doped CuInSe₂/CdS (CIS) based heterojunctions, in conjunction with selective etching of CdS, was investigated using x-ray photoelectron (XPS), Auger electron, and secondary ion mass spectroscopy (SIMS). The process involved the incorporation of Cd monolayers in the first 1-3 atomic layers of CIS, accompanied with significant Cu depletion with respect to In in the same region. The result was the large band bending on the CIS side of the heterojunction.

Original language	English (US)
Pages (from-to)	9380-9382
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	11
DOIs	https://doi.org/10.1063/1.1570500
State	Published - Jun 1 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Online availability

10.1063/1.1570500

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Cite this

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title = "Cd doping at the CuinSe2/CdS heterojunction",

abstract = "The chemical composition of cadmium doped CuInSe2/CdS (CIS) based heterojunctions, in conjunction with selective etching of CdS, was investigated using x-ray photoelectron (XPS), Auger electron, and secondary ion mass spectroscopy (SIMS). The process involved the incorporation of Cd monolayers in the first 1-3 atomic layers of CIS, accompanied with significant Cu depletion with respect to In in the same region. The result was the large band bending on the CIS side of the heterojunction.",

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AB - The chemical composition of cadmium doped CuInSe2/CdS (CIS) based heterojunctions, in conjunction with selective etching of CdS, was investigated using x-ray photoelectron (XPS), Auger electron, and secondary ion mass spectroscopy (SIMS). The process involved the incorporation of Cd monolayers in the first 1-3 atomic layers of CIS, accompanied with significant Cu depletion with respect to In in the same region. The result was the large band bending on the CIS side of the heterojunction.

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