The chemical composition of cadmium doped CuInSe2/CdS (CIS) based heterojunctions, in conjunction with selective etching of CdS, was investigated using x-ray photoelectron (XPS), Auger electron, and secondary ion mass spectroscopy (SIMS). The process involved the incorporation of Cd monolayers in the first 1-3 atomic layers of CIS, accompanied with significant Cu depletion with respect to In in the same region. The result was the large band bending on the CIS side of the heterojunction.
ASJC Scopus subject areas
- Physics and Astronomy(all)